UFB60FA60P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
1
4
RoHS
COMPLIANT
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
2
3
• Direct mounting to heatsink
• Totally lead (Pb)-free
• Designed and qualified for industrial level
SOT-227
DESCRIPTION
The UFB60FA60P insulated modules integrate two state of
the art Vishay’s ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure of
the diodes, and the platinum doping life time control, provide
an ultrasoft recovery current shape, together with the best
overall
performance,
ruggedness,
and
reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not to
be a predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS, and
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
PRODUCT SUMMARY
V
R
I
F(AV)
per module at T
C
= 107 °C
t
rr
600 V
60 A
79 ns
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 85 °C
T
C
= 25 °C
T
C
= 85 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
600
44
280
120
2500
- 55 to 175
UNITS
V
A
W
V
°C
Document Number: 94564
Revision: 05-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
UFB60FA60P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
SYMBOL
V
BR
I
R
= 100 µA
I
F
= 30 A
Forward voltage
V
FM
I
F
= 60 A
I
F
= 30 A
I
F
= 60 A
Reverse leakage current
Junction capacitance
I
RM
C
T
V
R
= V
R
rated
T
J
= 175 °C, V
R
= V
R
rated
V
R
= 600 V
T
J
= 125 °C
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.32
1.52
1.14
1.38
0.1
0.2
50
MAX.
-
1.69
1.9
1.39
1.66
100
1.0
-
µA
mA
pF
V
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/µs
V
R
= 200 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
79
155
6
14
234
1085
MAX.
118
209
10
20
590
2090
UNITS
ns
Peak recovery current
I
RRM
Q
rr
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
TEST CONDITIONS
MIN.
-
R
thJC
-
R
thCS
Flat, greased surface
-
-
-
-
0.05
30
1.3
0.75
-
-
-
g
N·m
TYP.
-
MAX.
1.5
°C/W
UNITS
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94564
Revision: 05-May-08
UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
1000
Vishay High Power Products
1000
100
175°C
125°C
Reverse Current - I
R
(μA)
10
1
0.1
0.01
0.001
25°C
Instantaneous Forward Current - I
F
(A)
100
Tj = 175°C
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
100
Tj = 25°C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
10
10
100
1000
Forward Voltage Drop - V
F
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
1
D = 0.33
D = 0.25
D = 0.2
Single Pulse
(Thermal Resistance)
0.1
1E-03
1E -0 2
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94564
Revision: 05-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
UFB60FA60P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
200
Vr = 200V
200
Allowable Case Temperature (°C)
175
150
150
If = 30A, 125°C
100
DC
t
rr
(ns)
125
50
Square wave (D=0.50)
80% rated Vr applied
100
If = 30A, 25°C
75
see note 1
0
0
10
20
30
40
50
60
70
50
100
Average Forward Current - I
F(AV)
(A)
1000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
dI
F
/dt (A/μs )
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
1750
Vr = 200V
60
1500
If = 30A, 125°C
1250
DC
Average Power Loss ( W )
50
40
30
20
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
Q
rr
(nC)
RMS Limit
1000
750
10
500
If = 30A, 25°C
0
0
10
20
30
40
50
250
Average Forward Current - I
F(AV)
(A)
0
1 00
1000
dI
F
/dt (A/μs )
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94564
Revision: 05-May-08
UFB60FA60P
Insulated Ultrafast
Rectifier Module, 60 A
30
Vr = 200V
25
Vishay High Power Products
20
If = 30A, 125°C
I
rr
(A)
15
If = 30A, 25°C
10
5
0
100
1000
dI
F
/dt (A/μs )
Fig. 9 - Typical Stored Current vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Document Number: 94564
Revision: 05-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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