VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
Standard Diodes
(Super MAGN-A-PAK Power Modules), 600 A
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 V
RMS
isolating voltage with non-toxic
substrate
• Industrial standard package
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Super MAGN-A-PAK
TYPICAL APPLICATIONS
• Rectifying bridge for large motor drives
• Rectifying bridge for large UPS
600 A
PRODUCT SUMMARY
I
F(AV)
Type
Package
Circuit configuration
Modules - diode, high voltage
Super MAGN-A-PAK
Two diodes doubler circuit
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
√t
V
RRM
T
Stg
, T
J
Range
Range
CHARACTERISTICS
VALUES
600
T
C
T
C
50 Hz
60 Hz
50 Hz
60 Hz
100
942
100
19 000
20 100
1805
1683
18 050
800 to 2000
-40 to +150
UNITS
A
°C
A
°C
A
kA
2
s
kA
2
√s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
VS-VSKD600..
12
16
20
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
1600
2000
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
1700
2100
50
I
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
Revision: 28-Apr-17
Document Number: 93583
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
180° conduction, half sine wave at T
C
= 100 °C
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
√t
for fusing
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
600
100
942
19.0
20.1
16.2
17.2
1805
1683
1319
1230
18 050
0.70
0.77
0.28
0.25
1.45
kA
2
√s
V
mΩ
V
kA
2
s
kA
UNITS
A
°C
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1800 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
BLOCKING
PARAMETER
RMS insulation voltage
Maximum peak reverse and off-state leakage
current
SYMBOL
V
INS
I
RRM
t=1s
T
J
= T
J
maximum, rated V
RRM
applied
TEST CONDITIONS
VALUES
3000
50
UNITS
V
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque
± 10 %
Super MAGN-A-PAK to heatsink
busbar to Super MAGN-A-PAK
SYMBOL
T
J
, T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound
TEST CONDITIONS
VALUES
-40 to +150
0.065
K/W
0.02
6 to 8
Nm
12 to 15
1500
See dimensions - link at the end of datasheet
g
UNITS
°C
Approximate weight
Case style
Super MAGN-A-PAK
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.009
0.011
0.014
0.021
0.037
RECTANGULAR CONDUCTION
0.006
0.011
0.015
0.022
0.038
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 28-Apr-17
Document Number: 93583
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
1000
900
800
700
600
500
400
300
200
100
0
0
200
400
600
800
1000
Average Forward Current (A)
VSKD600.. Series
Per Junction
T
J
= 150°C
RMS Limit
Conduction Period
Maximum Allowable Case Temperature (°C)
150
140
130
120
110
100
VSKD600.. Series
R
thJC
(DC) = 0.065 K/W
DC
180°
120°
90°
60°
30°
Conduction Angle
30°
90
80
0
100
200
300
60°
90°
120°
180°
400
500
600
700
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
150
140
130
120
110
100
30°
90
80
0
200
400
600
800
1000
Average Forward Current (A)
60°
90°
120°
180°
DC
Conduction Period
Peak Half Sine Wave Forward Current (A)
VSKD600.. Series
R
thJC
(DC) = 0.065 K/W
18000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
16000
Initial T = 150°C
J
@ 60 Hz 0.0083 s
14000
@ 50 Hz 0.0100 s
12000
10000
8000
6000
4000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N
)
VSKD600.. Series
Per Junction
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A
)
700
600
500
400
300
200
100
0
0
100
200
300
400
500
600
Average Forward Current (A)
Conduction Angle
20000
18000
16000
14000
12000
10000
8000
6000
4000
0.01
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration
.
Initial T
= 150°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
VSKD600.. Series
Per Junction
T = 150°C
J
VSKD600.. Series
Per Junction
0.1
Pulse Train Duration (s)
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 28-Apr-17
Document Number: 93583
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
R
th
Maximum Total Forward Power Loss (W)
1000
0
0.
DC
800
0.
08
600
180°
(Sine)
0.
12
K/
W
0.1
6K
/W
0.2
5
0
0.
K/
W
400
VSKD600.. Series
Per Junction
T
J
= 150°C
0
200
400
600
800
K/ W
0.5 K
/W
0.3
5
K/ W
6
4
SA
W
K/
W
K/
=
2
0.0
W
K/
-D
ta
el
R
200
0
1000
0
25
50
75
100
125
150
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
3000
R
th
02
0.
Maximum Total Power Loss (W)
2500
2000
1500
1000
500
0
0
200
400
180°
(Sine)
180°
(Rect)
K
/W
4K
/W
0.0
5K
/W
0.
0
0.0
8K
/W
0.12
K/ W
0.
03
SA
W
K/
=
/W
1K
0.0
-D
ta
el
R
2 x VSKD600.. Series
0.2 K
/W
Single Phase Bridge
Connected
T
J
= 150°C
600
800
1000
1200
0
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C )
Fig. 8 - Forward Power Loss Characteristics
4500
R
th
Maximum Total Power Loss (W)
4000
3500
3000
2500
2000
1500
1000
500
0
0
300
600
900
1200
1500
1800
0
3 x VSKD600.. Series
Three Phase Bridge
Connected
T
J
= 150°C
120°
(Rect)
0.
02
K/
W
0.0
3K
/W
0.0
5
K/ W
SA
=
01
0.
W
K/
-D
ta
el
R
K/ W
0.12 K
/W
0.2 K/ W
0.08
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C )
Fig. 9 - Forward Power Loss Characteristics
Revision: 28-Apr-17
Document Number: 93583
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD600 Series
www.vishay.com
Vishay Semiconductors
Transient Thermal Impedance Z
thJC
(K/W )
0.1
VSKD600.. Series
Per Junction
0.01
Steady State Value:
R
thJC
= 0.065 K/W
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJC
Characteristic
ORDERING INFORMATION TABLE
Device code
VS-VS KD
1
1
2
3
4
-
-
-
-
2
600
3
-
20
4
Vishay Semiconductors product
Circuit configuration D = 2 diodes in series
(see circuit configuration table)
Current rating
Voltage code x 100 = V
RRM
(see voltage ratings table)
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
KD
3
-
CIRCUIT DRAWING
2
1
Two diodes doubler circuit
+
~
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95088
Revision: 28-Apr-17
Document Number: 93583
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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