NSI45090DDT4G
Adjustable Constant Current
Regulator & LED Driver
45 V, 90
−
160 mA
+
15%, 2.7 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs. The CCR is based on
patent- pending Self- Biased Transistor (SBT) technology and
regulates current over a wide voltage range. It is designed with a
negative temperature coefficient to protect LEDs from thermal
runaway at extreme voltages and currents.
The CCR turns on immediately and is at 20% of regulation with
only 0.5 V Vak. The R
adj
pin allows I
reg(SS)
to be adjusted to higher
currents by attaching a resistor between R
adj
(Pin 3) and the Cathode
(Pin 4). The R
adj
pin can also be left open (No Connect) if no
adjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anode-
cathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device is
available in a thermally robust package, which is lead-free RoHS
compliant and uses halogen- free molding compound. For the
AEC−Q101 part please see the NSI45090JD datasheet.
Features
http://onsemi.com
I
reg(SS)
= 90
−
160 mA
@ Vak = 7.5 V
Anode
1
3
R
adj
4
Cathode
4
1 2
•
•
•
•
•
•
•
•
•
Robust Power Package: 2.7 Watts
Adjustable up to 160 mA
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing
−
Protecting LEDs
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Eliminates Additional Regulation
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
DPAK
CASE 369C
MARKING DIAGRAM
A
R
adj
Y
WW
NSI90D
G
1
YWW
NSI
90DG
C
Applications
•
Automobile: Chevron Side Mirror Markers, Cluster, Display &
•
•
•
•
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D
−
Power Dissipation Considerations
Application Note AND8349/D
−
Automotive CHMSL
ORDERING INFORMATION
Device
NSI45090DDT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
February, 2010
−
Rev. 0
1
Publication Order Number:
NSI45090DD/D
NSI45090DDT4G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Vak Max
V
R
T
J
, T
stg
ESD
Value
45
500
−55
to +150
Class 3A
Class B
Unit
V
mV
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Capacitance @ Vak = 0 V (Note 4)
1.
2.
3.
4.
Symbol
I
reg(SS)
V
overhead
I
reg(P)
C
C
86.2
Min
76.5
Typ
90
1.8
103
17
70
119.6
Max
103.5
Unit
mA
V
mA
pF
pF
I
reg(SS)
steady state is the voltage (Vak) applied for a time duration
≥
80 sec, using FR−4 @ 300 mm
2
2 oz. Copper traces, in still air.
V
overhead
= V
in
−
V
LEDs
. V
overhead
is typical value for 65% I
reg(SS)
.
I
reg(P)
non−repetitive pulse test. Pulse width t
≤
300
msec.
f = 1 MHz, 0.02 V RMS.
Characteristic
Total Device Dissipation (Note 5) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Lead 4 (Note 10)
Junction and Storage Temperature Range
Symbol
P
D
R
θ
JA
R
ψ
JL4
P
D
R
θ
JA
R
ψ
JL4
P
D
R
θ
JA
R
ψ
JL4
P
D
R
θ
JA
R
ψ
JL4
P
D
R
θ
JA
R
ψ
JL4
P
D
R
θ
JA
R
ψ
JL4
T
J
, T
stg
Max
1771
14.16
70.6
6.8
2083
16.67
60
6.3
2080
16.64
60.1
6.5
2441
19.53
51.2
5.9
2309
18.47
54.1
6.2
2713
21.71
46.1
5.7
−55
to +150
Unit
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C
THERMAL CHARACTERISTICS
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher
°C/W
values based upon empirical
measurements and method of attachment.
5. FR−4 @ 300 mm
2
, 1 oz. copper traces, still air.
6. FR−4 @ 300 mm
2
, 2 oz. copper traces, still air.
7. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
8. FR−4 @ 500 mm
2
, 2 oz. copper traces, still air.
9. FR−4 @ 700 mm
2
, 1 oz. copper traces, still air.
10. FR−4 @ 700 mm
2
, 2 oz. copper traces, still air.
http://onsemi.com
2
NSI45090DDT4G
Minimum FR−4 @ 300 mm
2
, 2 oz Copper Trace, Still Air
110
100
90
80
70
60
50
40
30
20
10
0
−10
−20
−10
I
reg(SS)
, STEADY STATE CURRENT (mA)
110
100
90
80
70
60
50
40
30
20
10
0
0
1
2
DC Test Steady State, Still Air, R
adj
= Open
3
4
5
6
7
8
9
10
Vak, ANODE−CATHODE VOLTAGE (V)
T
A
= 125°C
T
A
=
−40°C
T
A
= 25°C
T
A
= 85°C
[
−0.144
mA/°C
typ @ Vak = 7.5 V
[
−0.155
mA/°C
typ @ Vak = 7.5 V
[
−0.223
mA/°C
typ @ Vak = 7.5 V
TYPICAL PERFORMANCE CURVES
I
reg
, CURRENT REGULATION (mA)
T
A
= 25°C, R
adj
= Open
0
10
20
30
40
50
60
70
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 1. General Performance Curve for CCR
I
reg(SS)
, STEADY STATE CURRENT (mA)
110
I
reg(P)
, PULSE CURRENT (mA)
105
T
A
= 25°C
100
95
90
Non−Repetitive Pulse Test
85
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
105
100
95
90
85
80
75
85
Figure 2. Steady State Current (I
reg(SS)
) vs.
Anode−Cathode Voltage (Vak)
Vak @ 7.5 V
T
A
= 25°C
90
95
100
105
110
115
120
Vak, ANODE−CATHODE VOLTAGE (V)
I
reg(P)
, PULSE CURRENT (mA)
Figure 3. Pulse Current (I
reg(P)
) vs.
Anode−Cathode Voltage (Vak)
I
reg(SS)
, STEADY STATE CURRENT (mA)
104
103
102
101
100
99
98
97
96
95
94
93
92
91
90
89
160
150
140
130
120
110
Figure 4. Steady State Current vs. Pulse
Current Testing
I
reg
, CURRENT REGULATION (mA)
Vak @ 7.5 V
T
A
= 25°C
R
adj
= Open
100
90
80
1
10
R
adj
(W)
100
1000
0
10
20
30
40
50
60
70
80
90
TIME (s)
Figure 5. Current Regulation vs. Time
Figure 6. I
reg(SS)
vs. R
adj
http://onsemi.com
3
NSI45090DDT4G
4200
700 mm
2
/2 oz
3900
3600
500 mm
2
/2 oz
3300
3000
2700
300 mm
2
/2 oz
2400
2100
1800 700 mm
2
/1 oz
1500
1200
500 mm
2
/1 oz
900
600
300 mm
2
/1 oz
300
40
100
−40 −20
0
20
60
80
T
A
, AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (mW)
120
Figure 7. Power Dissipation vs. Ambient
Temperature @ T
J
= 1505C
APPLICATIONS
D1
Anode
Cathode
+
−
LED
Q1
Q2
Qx
D1
Anode
Q1
Q2
Qx
R
adj
LED
HF3−R5570
R
adj
LED
HF3−R5570
R
adj
+
−
HF3−R5570
Cathode
V
in
LED
R
adj
R
adj
R
adj
V
in
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
Figure 8. Typical Application Circuit
(30 mA each LED String)
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
LED’s = ((V
in
−
Q
X
V
F
−
D1 V
F
)/LED V
F
)
Example: V
in
= 12 Vdc, Q
X
V
F
= 3.5 Vdc, D1VF = 0.7 V
LED V
F
= 2.2 Vdc @ 30 mA
(12 Vdc
−
4.2 Vdc)/2.2 Vdc = 3 LEDs in series.
Figure 9. Typical Application Circuit
(90 mA each LED String)
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
Example: V
in
= 12 Vdc, Q
X
V
F
= 3.5 Vdc, D1VF = 0.7 V
LED V
F
= 2.6 Vdc @ 90 mA
(12 Vdc
−
(3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series.
Number of Drivers = LED current/30 mA
90 mA/30 mA = 3 Drivers (Q1, Q2, Q3)
http://onsemi.com
4
NSI45090DDT4G
Comparison of LED Circuit using CCR vs. Resistor Biasing
ON Semiconductor CCR Design
Constant brightness over full Supply Voltage
(more efficient), see Figure 10
Little variation of power in LEDs, see Figure 11
Constant current extends LED strings lifetime, see Figure 10
Current decreases as voltage increases, see Figure 10
Current supplied to LED string decreases as temperature
increases (self-limiting), see Figure 2
Single resistor is used for current select
Fewer components, less board space required
Surface mount component
Resistor Biased Design
Large variations in brightness over full Automotive Supply Voltage
Large variations of current (power) in LEDs
High Supply Voltage/ Higher Current in LED strings limits lifetime
Current increases as voltage increases
LED current decreases as temperature increases
Requires costly inventory
(need for several resistor values to match LED intensity)
More components, more board space required
Through-hole components
140
120
T
A
= 25°C
800
700
600
Pd LEDs (mW)
500
400
300
200
100
16
0
9
T
A
= 25°C
LED Power with
CCR Device
LED Power
with 83.3
W
Representative Test Data
for Figure 8 Circuit, Pd of
LEDs, FR−4 @ 300 mm
2
,
2 oz Copper Area
10
11
12
13
14
15
16
Circuit Current with
100 CCR Device
I (mA)
80
60
40
20
0
9
Circuit Current
with 83.3
W
10
11
12
Representative Test Data
for Figure 8 Circuit, Current
of LEDs, FR−4 @ 300 mm
2
,
2 oz Copper Area
13
14
15
V
in
(V)
V
in
(V)
Figure 10. Series Circuit Current
Current Regulation: Pulse Mode (I
reg(P)
) vs DC
Steady-State (I
reg(SS)
)
Figure 11. LED Power
There are two methods to measure current regulation:
Pulse mode (I
reg(P)
) testing is applicable for factory and
incoming inspection of a CCR where test times are a
minimum. (t < 300
ms).
DC Steady-State (I
reg(SS)
) testing
is applicable for application verification where the CCR will
be operational for seconds, minutes, or even hours. ON
Semiconductor has correlated the difference in I
reg(P)
to
I
reg(SS)
for stated board material, size, copper area and
copper thickness. I
reg(P)
will always be greater than I
reg(SS)
due to the die temperature rising during I
reg(SS)
. This heating
effect can be minimized during circuit design with the
correct selection of board material, metal trace size and
weight, for the operating current, voltage, board operating
temperature (T
A
) and package. (Refer to Thermal
Characteristics table).
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
