TGA4530
K Band High Linearity Power Amplifier
Key Features
•
•
•
•
•
•
•
•
Frequency Range: 17 - 21 GHz
20 dB Gain
30 dBm nominal P1dB
42 dBm nominal OTOI
20 dB Return Loss
Bias 5 - 7 V @ 825 mA
0.25 um 3MI pHEMT technology
Chip Dimensions 2.43 x 1.45 x 0.1mm
Measured Fixtured Data
Bias Conditions: Vd = 7 V, Id = 825 mA
25
20
Gain
15
IRL
10
ORL
5
0
-5
-10
-15
-20
-25
-30
-35
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
44
42
40
OTOI @ 20dBm/Tone
38
P1dB
36
34
32
30
28
26
24
17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0
Frequency (GHz)
Primary Applications
•
•
Point-to-Point Radio
K Band Sat-Com
Sparameters (dB)
Product Description
The TriQuint TGA4530 is a High Power Amplifier
MMIC for 17 – 21GHz applications. The part is
designed using TriQuint’s 0.25 um 3MI pHEMT
production process.
The TGA4530 nominally provides 30 dBm output
power @ 1dB gain compression and 42 dBm OTOI
at a bias of 7 V and 825 mA. The typical gain is 20 dB.
The part is ideally suited for low cost emerging
markets such as Point-to-Point Radio, and K-band
Satellite Communications.
The TGA4530 is 100% DC and RF tested on-wafer to
ensure performance compliance.
The TGA4530 has a protective surface passivation
layer providing environmental robustness.
Lead-Free & RoHS compliant
P1dB & OTOI (dBm)
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
TGA4530
TABLE I
ABSOLUTE MAXIMUM RATINGS 1/
SYMBOL
Vd
Vg
Id
| I
G
|
P
IN
P
D
Tchannel
PARAMETER
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5 V TO 0 V
1.75 A
35 mA
26 dBm
14.0 W
200
°C
320
°C
-65 to 200
°C
NOTES
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is not
implied.
Junction operating temperature will directly affect the device median lifetime. For maximum life, it is
recommended that junction temperatures be maintained at the lowest possible levels.
.2/
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 ° Nominal)
C
PARAMETER
Frequency Range
Drain Voltage, Vd
Drain Current, Id
Gate Voltage, Vg
Small Signal Gain, S21
Input Return Loss, S11
Output Return Loss, S22
Saturated Output Power @ Pin = 16dBm, Psat
Output Power @ 1dB Gain Compression, P1dB
Output Third Order Intercept, OTOI @ 20dBm/Tone
Small Signal Gain Temperature Coefficient
Noise Figure @ 19GHz
TYPICAL
17 - 21
7
825
-0.45
20
20
20
32
30
42
-0.03
6
UNITS
GHz
V
mA
V
dB
dB
dB
dBm
dBm
dBm
dB/
0
C
dB
2
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
TGA4530
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
Vd = 7 V
Id = 825 mA
P
diss
= 5.78 W
Small Signal
Vd = 7 V
Id = 1050 mA @ Psat
P
out
= 1.6 W (RF)
P
diss
= 5.75 W
Tchannel
(°
C)
150
θ
JC
(°
C/W)
14.7
T
m
(HRS)
1.0E+6
θ
JC
Thermal Resistance
(channel to Case)
θ
JC
Thermal Resistance
(channel to Case)
150
14.7
1.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
o
Carrier at 65 C baseplate temperature.
.
Median Lifetime (Tm) vs. Channel Temperature
1.E+13
1.E+12
Median Lifetime (Hours)
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
25
FET3
50
75
100
125
150
175
200
Channel Temperature (
°
C)
3
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
TGA4530
Measured Data
Bias Conditions: Idq = 825 mA
26
25
24
23
22
Gain (dB)
21
20
19
18
17
16
15
16
17
18
19
20
21
22
23
24
25
Frequency (GHz)
-10
-12
-14
-16
-18
Return Loss (dB)
-20
-22
-24
-26
-28
-30
-32
-34
-36
16
17
18
19
20
21
Frequency (GHz)
22
23
24
25
4
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
Vd = 4 V – 7 V
4V_825mA
5V_825mA
6V_825mA
7V_825mA
Vd = 7 V
IRL
ORL
TGA4530
Measured Data
Bias Conditions: Vd = 4 V – 7 V, Idq = 825 mA
35
Vd = 4V – 7 V
34
Saturated Power @ Pin = 16dBm (dBm)
33
32
31
30
29
28
27
26
25
16.0
7V_825mA
6V_825mA
5V_825mA
4V_825mA
16.5
17.0
17.5
18.0
18.5
19.0
Frequency (GHz)
19.5
20.0
20.5
21.0
35
Output Power @ 1dB Gain Compression (dBm)
34
33
32
31
30
29
28
27
26
25
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
Frequency (GHz)
5
TriQuint Semiconductor: www.triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Web: www.triquint.com
Oct 2008 © Rev A
Vd = 4 V – 7 V
7V_825mA
6V_825mA
5V_825mA
4V_825mA
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