PD -
97358
IRLS3036PbF
IRLSL3036PbF
Applications
l
DC Motor Drive
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Optimized for Logic Level Drive
l
Very Low R
DS(ON)
at 4.5V V
GS
l
Superior R*Q at 4.5V V
GS
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
G
HEXFET
®
Power MOSFET
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
60V
1.9mΩ
2.4mΩ
270A
195A
c
G
D
S
S
D
G
TO-262
IRLSL3036PbF
D
2
Pak
IRLS3036PbF
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Max.
270
190
195
1100
380
2.5
±16
8.0
c
c
Units
A
d
W
W/°C
V
V/ns
°C
f
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
-55 to + 175
300
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
d
e
290
See Fig. 14, 15, 22a, 22b
l
j
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount, steady state)
11
k
Parameter
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
www.irf.com
1
12/08/08
IRLS/SL3036PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
60
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
––– –––
V V
GS
= 0V, I
D
= 250µA
0.061 ––– V/°C Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 165A
1.9
2.4
mΩ
2.2
2.8
V
GS
= 4.5V, I
D
= 140A
–––
2.5
V V
DS
= V
GS
, I
D
= 250µA
–––
20
V
DS
= 60V, V
GS
= 0V
µA
––– 250
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
––– 100
V
GS
= 16V
nA
––– -100
V
GS
= -16V
g
g
d
2.0
–––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
340 ––– –––
–––
91
140
–––
31
–––
–––
51
–––
–––
40
–––
–––
66
–––
––– 220 –––
––– 110 –––
––– 110 –––
––– 11210 –––
––– 1020 –––
––– 500 –––
––– 1430 –––
––– 1880 –––
S
Conditions
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
iÃ
h
V
DS
= 10V, I
D
= 165A
I
D
= 165A
V
DS
= 30V
nC
V
GS
= 4.5V
I
D
= 165A, V
DS
=0V, V
GS
= 4.5V
V
DD
= 39V
I
D
= 165A
ns
R
G
= 2.1Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 50V
pF ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
V
GS
= 0V, V
DS
= 0V to 48V
g
g
i
h
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
270
A
1100
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ãe
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
S
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 165A, V
GS
= 0V
V
R
= 51V,
T
J
= 25°C
–––
62
–––
ns
I
F
= 165A
T
J
= 125°C
–––
66
–––
di/dt = 100A/µs
T
J
= 25°C
––– 310 –––
nC
T
J
= 125°C
––– 360 –––
–––
4.4
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
g
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.021mH
R
G
= 25Ω, I
AS
= 165A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤
165A, di/dt
≤
430A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as
11
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive
avalanche performance.
R
θJC
value shown is at time zero.
2
www.irf.com
IRLS/SL3036PbF
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
1000
TOP
VGS
15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
2.7V
2.7V
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
10
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.5
ID = 165A
2.0
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
1.5
1
T J = 25°C
VDS = 25V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
1.0
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
5.0
ID= 165A
VGS, Gate-to-Source Voltage (V)
4.0
VDS= 48V
VDS= 30V
C, Capacitance (pF)
10000
Ciss
3.0
Coss
1000
Crss
2.0
1.0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0.0
0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRLS/SL3036PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.0
0.5
1.0
1.5
2.0
2.5
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
1
VGS = 0V
0.1
VSD, Source-to-Drain Voltage (V)
10msec
DC
0
1
10
100
Fig 7.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
75
Id = 5mA
VDS, Drain-to-Source Voltage (V)
300
250
ID, Drain Current (A)
Limited By Package
70
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
3.0
2.5
2.0
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
1000
800
600
400
200
0
ID
TOP
27A
50A
BOTTOM 165A
Energy (µJ)
1.5
1.0
0.5
0.0
-10
0
10
20
30
40
50
60
70
25
50
75
100
125
150
175
Fig 11.
Typical C
OSS
Stored Energy
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4
www.irf.com
IRLS/SL3036PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.01115
0.08360
0.18950
0.11519
0.000009
0.000080
0.001295
0.006726
τi
(sec)
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Tj
= 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 165A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
www.irf.com
EAR , Avalanche Energy (mJ)
5
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