Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%.
4. Guaranteed by design but not tested.
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2
NSS12100UW3TCG
1.0
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
−55°C
I
C
/I
B
= 10
V
CE(sat)
= 150°C
25°C
3.0
I
C
/I
B
= 100
2.5
2.0
150°C
1.5
1.0
0.5
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
V
CE(sat)
= −55°C
25°C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
600
150°C (5.0 V)
h
FE
, DC CURRENT GAIN
500
150°C (2.0 V)
400
300
200
−55°C (2.0 V)
100
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
V
BE(sat)
, BASE EMITTER
SATURATION VOLTAGE (V)
Figure 2. Collector Emitter Saturation Voltage vs.
Collector Current
1.4
I
C
/I
B
= 10
1.2
1.0
T
A
= −55°C
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
25°C
150°C
Figure 3. DC Current Gain vs. Collector
Current
V
BE(on)
, BASE EMITTER TURN−ON VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.4
V
CE
= −1.0 V
1.2
1.0
T
A
= −55°C
0.8
0.6
0.4
150°C
0.2
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
25°C
1.0
10 mA
0.8
100 mA
300 mA
I
C
= 500 mA
0.6
0.4
0.2
0
0.01
0.1
1
10
100
I
B
, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
NSS12100UW3TCG
50
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
45
40
C
ibo(pF)
35
30
25
20
0
1
2
3
4
V
EB
, EMITTER BASE VOLTAGE (V)
5
30
25
C
obo(pF)
20
15
10
5
0
0
1
3
4
5
6
7
8
V
CB
, COLLECTOR BASE VOLTAGE (V)
2
9
10
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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4
NSS12100UW3TCG
PACKAGE DIMENSIONS
WDFN3
CASE 506AU
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
MIN
0.70
0.00
0.25
1.40
0.90
MILLIMETERS
NOM
MAX
0.75
0.80
0.05
0.20 REF
0.30
0.35
2.00 BSC
1.50
1.60
2.00 BSC
1.00
1.10
1.30 BSC
0.35 REF
0.40
0.45
MIN
0.028
0.000
0.010
INCHES
NOM
0.030
MAX
0.031
0.002
0.014
0.063
0.043
D
A
B
PIN ONE
REFERENCE
E
2X
0.10 C
2X
0.35
0.008 REF
0.012
0.079 BSC
0.055
0.059
0.079 BSC
0.035
0.039
0.051 BSC
0.014 REF
0.014
0.016
0.10 C
0.10 C
8X
0.08 C
SEATING
PLANE
A1
2X
L
K
0.400
1.600
E2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.275
ON Semiconductor and the
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