IDD15E60
Fast Switching
EmCon Diode
Emitter Controlled Diode
Product Summary
V
RRM
I
F
V
F
600
15
1.5
175
V
A
V
°C
Feature
600V
EmCon technology
•
600 V
Emitter Controlled technology
T
jmax
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
175°C operating temperature
•
Easy paralleling
PG-TO252-3
Type
IDD15E60
Package
PG-TO252-3
Ordering Code
-
Marking
D15E60
Pin 1 PIN 2,4
NC
C
PIN 3
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Parameter
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Continous forward current
Continuous forward current
T
C
= 25C
T
C
=25°C
T
C
= 90C
T
=90°C
C
Symbol
Symbol
V
RRM
R M
V
R
I
F
I
F
Value
Value
600
600
29.2
29.2
19.6
19.6
Unit
Unit
V
V
A
A
Surge non repetitive forward current
Surge non repetitive forward current
T
C
= 25C,
t
p
= 10 ms, sine halfwave
Maximum repetitive forward current
Maximum
limited by
forward current
T
C
= 25C,
t
p
repetitive
t
j,max
, D
= 0.5
T
C
=25°C,
t
p
limited
Power dissipation
by
T
jmax
,
D=0.5
Power dissipation
T
C
= 25C
T
C
= 90C
T
C
=25°C
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
S M
I
F
I
F
I
FRM
R M
60
60
45
45
83.3
47.2
83.3
-40…+175
47.2
-55...+150
-55...+175
A
A
P
tot
P
t o t
T
j
T
stg
T
j ,
T
stg
T
S
T
S
Page 1
W
W
Operating junction temperature
T
C
=90°C
Storage temperature
Operating and storage temperature
Soldering temperature
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
reflow soldering, MSL3
Rev. 2.4
Rev.242
260
260
°C
°C
°C
2013-12-05
2007-04-24
IDD15E60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
-
-
-
Values
typ.
-
-
-
max.
1.8
75
50
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=600V,
T
j
=25°C
V
R
=600V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.5
1.5
50
1250
V
2
-
Forward voltage drop
I
F
=15A,
T
j
=25°C
I
F
=15A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.4
Rev.2.2
Page 2
2013-12-05
2007-04-24
IDD15E60
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=25°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=125°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
87
124
131
13.7
16.4
19.3
595
995
1104
3.6
4.3
4.5
-
-
-
A
-
-
-
nC
-
-
-
-
-
-
Peak reverse current
V
R
=400V,
I
F
= 15 A, di
F
/dt=1000A/µs,
T
j
=25°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=125°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=25°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=125°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=25°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=125°C
V
R
=400V,
I
F
=15A, di
F
/dt=1000A/µs,
T
j
=150°C
Rev. 2.4
Rev.2.2
Page 3
2013-12-05
2007-04-24
IDD15E60
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
175 °C
90
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
175°C
30
W
A
70
P
tot
60
50
20
I
F
15
40
30
20
5
10
0
25
0
25
10
50
75
100
125
175
°C
T
C
50
75
100
125
°C
T
C
175
3 Typ. diode forward current
I
F
=
f
(V
F
)
50
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2
V
30A
A
1.8
1.7
30
V
F
-55°C
25°C
100°C
150°C
I
F
1.6
1.5
1.4
1.3
15A
20
7.5A
10
1.2
1.1
0
0.5
1
1.5
V
V
F
2.5
1
-60
-20
20
60
100
160
°C
T
j
Rev. 2.4
Rev.2.2
Page 4
2013-12-05
2007-04-24
IDD15E60
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
500
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125 °C
1450
ns
400
350
300
250
nC
1250
1150
30A
30A
15A
7.5A
Q
rr
t
rr
15A
1050
950
200
150
100
50
0
200
850
7.5A
750
650
550
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
300
400
500
600
700
800
A/µs
1000
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
A
18
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
11
16
15
14
30A
15A
7.5A
9
I
rr
S
13
12
11
10
9
8
7
6
5
4
200
300
400
500
600
700
800
8
30A
7
15A
6
7,5A
5
4
A/µs
1000
di
F
/dt
3
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev. 2.4
Rev.2.2
Page 5
2013-12-05
2007-04-24
stm32/stm8
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