电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SI7464DP-T1-E3

产品描述USB Interface IC USB to Basic Serial UART IC QFN-16
产品类别分立半导体    晶体管   
文件大小303KB,共12页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SI7464DP-T1-E3在线购买

供应商 器件名称 价格 最低购买 库存  
SI7464DP-T1-E3 - - 点击查看 点击购买

SI7464DP-T1-E3概述

USB Interface IC USB to Basic Serial UART IC QFN-16

SI7464DP-T1-E3规格参数

参数名称属性值
是否无铅不含铅
零件包装代码SOT
包装说明SMALL OUTLINE, R-PDSO-F5
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
雪崩能效等级(Eas)0.45 mJ
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压200 V
最大漏极电流 (ID)1.8 A
最大漏源导通电阻0.24 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-F5
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量5
工作模式ENHANCEMENT MODE
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)1.8 W
最大脉冲漏极电流 (IDM)8 A
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式FLAT
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
最大关闭时间(toff)50 ns
最大开启时间(吨)35 ns
Base Number Matches1

文档预览

下载PDF文档
Si7464DP
Vishay Siliconix
N-Channel 200-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
(Ω)
0.24 at V
GS
= 10 V
0.26 at V
GS
= 6 V
I
D
(A)
2.8
2.7
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
PowerPAK SO-8
PWM Optimized For Fast Switching
APPLICATIONS
6.15 mm
S
1
2
3
S
S
5.15 mm
• Primary Side Switch
G
4
D
D
8
7
6
5
D
D
D
G
Bottom View
Ordering Information:
Si7464DP-T1-E3 (Lead (Pb)-free)
Si7464DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Continuous Source Current
Pulsed Drain Current
Avalanche Current
b
Single Avalanche Energy
b
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
S
I
DM
I
AS
E
AS
T
A
= 25 °C
T
A
= 70 °C
P
D
T
J
, T
stg
10 s
2.8
2.2
3.5
4.2
2.6
Steady State
200
± 20
1.8
1.5
1.5
8
3
0.45
1.8
1.1
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
25
60
2.9
Maximum
30
70
3.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Guaranteed by design, not subject to production testing.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72052
S09-0227-Rev. C, 09-Feb-09
www.vishay.com
1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1680  877  2448  2828  134  34  52  51  44  43 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved