AUTOMOTIVE GRADE
AUIRLS3034-7P
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
40V
1.0m
1.4m
380A
240A
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
Base Part Number
AUIRLS3034-7P
Absolute Maximum Ratings
Package Type
D
2
Pak 7 Pin
D
2
Pak 7 Pin
AUIRLS3034-7P
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLS3034-7P
AUIRLS3034-7TRL
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
380
270
240
1540
380
2.5
± 20
250
See Fig.14,15, 22a, 22b
1.3
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-4
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
AUIRLS3034-7P
Min. Typ. Max. Units
Conditions
40
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.035 ––– V/°C Reference to 25°C, I
D
= 5mA
–––
1.0
1.4
V
GS
= 10V, I
D
= 200A
m
–––
1.2
1.7
V
GS
= 4.5V, I
D
= 180A
1.0
–––
2.5
V V
DS
= V
GS
, I
D
= 250µA
370
–––
–––
–––
–––
–––
–––
1.9
–––
–––
–––
–––
–––
–––
20
250
100
-100
S V
DS
= 10V, I
D
= 220A
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D
= 170A
V
DS
= 20V
nC
V
GS
= 4.5V
V
DD
= 26V
I
D
= 220A
ns
R
G
= 2.7
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 40V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 200A,V
GS
= 0V
T
J
= 25°C
V
DD
= 34V
ns
T
J
= 125°C
I
F
= 220A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
––– 120 180
–––
32
–––
–––
71
–––
–––
49
–––
–––
71
–––
––– 590 –––
–––
94
–––
––– 200 –––
––– 10990 –––
––– 2030 –––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
1100
2520
3060
–––
–––
–––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Typ. Max. Units
––– 380
–––
–––
46
49
100
110
3.7
1540
1.3
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.010mH, R
G
= 25, I
AS
= 220A, V
GS
=10V. Part not recommended for use above this value.
I
SD
220A,
di/dt
1240A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero
R
2
2015-11-4
AUIRLS3034-7P
100000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
10000
60µs PULSE WIDTH
ID, Drain-to-Source Current (A)
TOP
Tj = 25°C
ID, Drain-to-Source Current (A)
10000
1000
BOTTOM
1000
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
60µs PULSE WIDTH
Tj = 175°C
100
100
2.5V
10
2.5V
0.1
1
10
100
1
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 200A
VGS = 10V
1.5
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
5.0
ID = 170A
VGS, Gate-to-Source Voltage (V)
4.0
VDS = 32V
VDS = 20V
C, Capacitance (pF)
Ciss
10000
C oss
Crss
3.0
2.0
1.0
1000
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0.0
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-11-4
1000
10000
AUIRLS3034-7P
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
1msec
100µsec
100
Limited by package
10msec
T J = 25°C
10
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
DC
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD , Source-to-Drain Voltage (V)
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
50
Id = 5mA
48
400
Limited By Package
300
ID, Drain Current (A)
46
200
44
100
42
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
40
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
2.5
Fig 10.
Drain-to-Source Breakdown Voltage
1200
EAS , Single Pulse Avalanche Energy (mJ)
2.0
1000
800
600
400
200
0
25
50
75
100
ID
TOP
47A
94A
BOTTOM 220A
Energy (µJ)
1.5
1.0
0.5
0.0
-5
0
5
10 15 20 25 30 35 40 45
125
150
175
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-11-4
1
Thermal Response ( Z thJC ) °C/W
AUIRLS3034-7P
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
J
J
1
R
1
R
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
4
C
Ri (°C/W)
0.00741
0.05041
0.18384
0.15864
I
(sec)
0.000005
0.000038
0.001161
0.008809
1
2
3
4
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
0.01
100
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
tav (sec)
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 220A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
EAR , Avalanche Energy (mJ)
2015-11-4
NXP MCU
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