AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
TO-220AB
AUIRFZ44Z
AUIRFZ44Z
AUIRFZ44ZS
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D
D
55V
13.9m
51A
S
G
D
2
Pak
AUIRFZ44ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRFZ44Z
AUIRFZ44ZS
Package Type
TO-220
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFZ44Z
AUIRFZ44ZS
AUIRFZ44ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
51
36
200
80
0.53
± 20
86
105
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
1.87
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-09-25
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.054
11.1
–––
–––
–––
–––
–––
–––
29
7.2
12
14
68
33
41
4.5
7.5
AUIRFZ44Z/ZS
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
13.9 m V
GS
= 10V, I
D
= 31A
4.0
V V
DS
= V
GS
, I
D
= 250µA
–––
S V
DS
= 25V, I
D
= 31A
20
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 55V,V
GS
= 0V,T
J
=125°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
43
11
18
–––
–––
–––
–––
–––
–––
I
D
= 31A
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 31A
ns
R
G
= 15
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz,See Fig.5
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 31A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 31A , V
DD
= 28V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
––– 1420 –––
––– 240 –––
––– 130 –––
––– 830 –––
––– 190 –––
––– 300 –––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
23
17
51
200
1.2
35
26
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.18mH, R
G
= 25, I
AS
= 31A, V
GS
=10V. Part not recommended for use above this value.
I
SD
31A,
di/dt
840A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population 100% tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
is rated at T
J
of approximately 90°C.
2
2017-09-25
AUIRFZ44Z/ZS
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
4.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
1
0.1
1
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
60
Gfs, Forward Transconductance (S)
ID , Drain-to-Source Current
)
50
40
30
20
10
T J = 25°C
100
T J = 175°C
10
T J = 25°C
T J = 175°C
1.0
2
4
6
VDS = 15V
60µs
PULSE WIDTH
8
10
12
V DS = 10V
0
0
10
20
30
40
50
ID ,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
3
2017-09-25
AUIRFZ44Z/ZS
10000
Coss = Cds + Cgd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
12.0
ID = 31A
10.0
8.0
6.0
4.0
2.0
0.0
VDS = 44V
VDS = 28V
VDS = 11V
C, Capacitance(pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
5
10
15
20
25
30
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
T J = 175°C
10
ID, Drain-to-Source Current (A)
100
100
10
100µsec
1
T J = 25°C
0.10
VGS = 0V
0.0
0.5
1.0
1.5
2.0
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
0.01
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2017-09-25
AUIRFZ44Z/ZS
55
50
45
ID, Drain Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 31A
VGS = 10V
2.0
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
3
C
Ri (°C/W)
0.8487
0.6254
0.3974
i
(sec)
0.00044
0.00221
0.01173
1
2
3
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-09-25
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
