120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Features
GaN on SiC Depletion-Mode HEMT Transistor
Common-Source Configuration
Broadband Class AB Operation
Thermally Enhanced Cu/Mo/Cu Package
RoHS* Compliant
+50 V Typical Operation
MTTF = 600 Years (T
J
< 200°C)
3A001.b.3.a.3 Export Classification
MSL-1
Rev. V4
Description
The MAGX-003135-120L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor optimized for civilian and military
radar pulsed applications between 3.1 - 3.5 GHz.
Using state of the art wafer fabrication processes,
these high performance transistors provide high
gain, efficiency, bandwidth, ruggedness over a wide
bandwidth for today’s demanding application needs.
The MAGX-003135-120L00 is constructed using a
thermally enhanced Cu/Mo/Cu flanged ceramic
package which provides excellent thermal
performance. High breakdown voltages allow for
reliable and stable operation in extreme mismatched
load conditions unparalleled with older
semiconductor technologies.
Ordering Information
Part Number
MAGX-003135-120L00
MAGX-003135-SB4PPR
Description
120 W GaN Power
Transistor
3.1-3.5 GHz
Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Electrical Specifications: Freq. = 3.1 - 3.5 GHz, T
A
= 25°C
Parameter
Symbol
Min.
Typ.
Max.
Units
RF Functional Tests: P
IN
= 10 W, V
DD
= 50 V, I
DQ
= 300 mA, Pulse Width = 300 µs, Duty = 10%
Peak Output Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
P
OUT
G
P
η
D
VSWR-S
VSWR-T
120
10.8
45
-
-
135
11.8
52
5:1
10:1
-
-
-
-
-
W
dB
%
-
-
Rev. V4
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not Applicable (Input Matched)
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
13.4
1.4
N/A
16
2.2
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 23 mA
V
DS
= 5 V, I
D
= 9 A
I
DS
V
GS (TH)
G
M
-
-5
3.3
0.5
-3
-
9
-2
-
mA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Absolute Maximum Ratings
1,2,3,4,5
Parameter
Input Power (P
IN
)
Drain Supply Voltage (V
DD
)
Gate Supply Voltage (V
GG
)
Supply Current (I
DD
)
Absolute Maximum Junction/Channel Temperature
Pulsed Power Dissipation at 85ºC
Operating Temperature
Storage Temperature
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
1.
2.
3.
4.
Rev. V4
Limit
42 dBm
+65 V
-8 to 0 V
6.7 A
200ºC
170 W (Pulse Width = 100 μs)
144 W (Pulse Width = 300 μs)
-40 to +95ºC
-65 to +150ºC
300 V
700 V
Exceeding any one or combination of these limits may cause permanent damage to this device.
MACOM does not recommend sustained operation near these survivability limits.
For saturated performance, the following is recommended: (3*V
DD
+ abs(V
GG
)) <175 V.
Operating at nominal conditions with T
J
≤ +200°C will ensure MTTF > 1 x 10
6
hours. Junction temperature directly affects device MTTF
and should be kept as low as possible to maximize lifetime.
5. Junction Temperature (T
J
) = T
C
+ Ө
JC
* ((V * I) - (P
OUT
- P
IN
)).
Typical Transient Thermal Resistances (I
DQ
= 300 mA, 300 μs pulse, 10% duty cycle):
a) Freq. = 3.1 GHz, Ө
JC
= 0.63C/W
T
J
= 178C (T
C
= 85C, 50 V, 5.15 A, P
OUT
= 120 W, P
IN
= 9.5 W)
b) Freq. = 3.3 GHz, Ө
JC
= 0.69C/W
T
J
= 188C (T
C
= 85C, 50 V, 5.24 A, P
OUT
= 120 W, P
IN
= 7.0 W)
c) Freq. = 3.5 GHz, Ө
JC
= 0.67C/W
T
J
= 180C (T
C
= 85C, 50 V, 5.12 A, P
OUT
= 120 W, P
IN
= 6.8 W)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Evaluation Board Assembly (3.1 - 3.5 GHz)
Rev. V4
Evaluation Board Impedances
Freq. (MHz)
3100
3300
3500
Zif
Correct Device Sequencing
Z
OF
(Ω)
4.1 - j2.4
4.0 - j2.8
2.6 - j2.6
Z
IF
(Ω)
5.9 - j4.2
5.2 - j4.8
3.9 - j5.0
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
INPUT
NETWORK
Zof
OUTPUT
NETWORK
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-003135-120L00
GaN on SiC HEMT Pulsed Power Transistor
120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty
Typical Performance Curves: P
IN
= 10 W, V
DD
= 50 V, I
DQ
= 300 mA
Peak Output Power vs. Frequency
150
Rev. V4
Power Gain vs. Frequency
12.0
300 us, 10%
Peak Output Power (W)
145
Power Gain (dB)
11.8
11.6
11.4
11.2
11.0
100 us, 10%
100 us, 20%
140
135
130
125
120
3.1
3.2
3.3
3.4
3.5
300 us ,10%
100 us, 10%
100 us, 20%
3.1
3.2
3.3
3.4
3.5
Frequency (GHz)
Frequency (GHz)
Drain Efficiency vs. Frequency
53
300 us ,10%
Return Loss vs. Frequency
0.6
100 us, 10%
Drain Efficiency (%)
52
51
50
0.5
100 us, 20%
Droop (dB)
0.4
0.3
0.2
300 us ,10%
49
48
3.1
3.2
3.3
3.4
3.5
0.1
0.0
3.1
100 us, 10%
100 us, 20%
3.2
3.3
3.4
3.5
Frequency (GHz)
Frequency (GHz)
Droop vs. Frequency
-4
300 us ,10%
Return Loss (dB)
-6
-8
-10
-12
-14
3.1
3.2
3.3
100 us, 10%
100 us, 20%
3.4
3.5
Frequency (GHz)
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
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