IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= -10 V
34
9.9
16
Single
S
FEATURES
-60
0.14
•
•
•
•
•
•
•
•
Dynamic dV/dt rating
Repetitive avalanche rated
Available
P-channel
Available
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
G
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
G
D
S
D
P-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF9Z34PbF
SiHF9Z34-E3
IRF9Z34
SiHF9Z34
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at -10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
-60
± 20
-18
-13
-72
0.59
370
-18
8.8
88
-4.5
-55 to +175
300
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= -25 V, starting T
J
= 25 °C, L = 1.3 mH, R
g
= 25
,
I
AS
= -18 A (see fig. 12).
c. I
SD
-18 A, dI/dt
170 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
S16-0754-Rev. C, 02-May-16
Document Number: 91092
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
R
g
Between lead,
6 mm (0.25") from
package and center of
die contact
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= -250 μA
Reference to 25 °C, I
D
= -1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= -60 V, V
GS
= 0 V
V
DS
= -48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= -10 V
I
D
= -11 A
b
-60
-
-2.0
-
-
-
-
5.9
-
-
-
-
-
-0.060
-
-
-
-
-
-
1100
620
100
-
-
-
18
120
20
58
4.5
-
-
-4.0
± 100
-100
V
V/°C
V
nA
μA
-500
0.14
-
-
-
-
34
9.9
16
-
-
-
-
-
nH
ns
nC
pF
S
V
DS
= -25 V, I
D
= -11 A
b
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
I
D
= -1 8 A,
V
DS
= -48 V,
see fig. 6 and 13
b
V
GS
= -10 V
-
-
-
-
-
-
-
V
DD
= -30 V, I
D
= -18 A,
R
g
= 12
,
R
D
= 1.5, see fig. 10
b
G
Internal Source Inductance
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
S
-
0.7
7.5
-
-
3.9
f = 1 MHz, open drain
MOSFET symbol
showing the
integral reverse
p -n junction diode
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
D
-
-
-
-
-
-
-
-
100
0.28
-18
A
-72
-6.3
200
0.52
V
ns
μC
G
S
T
J
= 25 °C, I
S
= -18 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= -18 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0754-Rev. C, 02-May-16
Document Number: 91092
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z34, SiHF9Z34
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
Vishay Siliconix
10
2
- I
D
, Drain Current (A)
10
1
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
I
D
= - 18 A
V
GS
= - 10 V
2.0
1.5
- 4.5 V
1.0
10
0
0.5
20 µs Pulse Width
T
C
=
25 °C
10
0
10
1
10
-1
91092_01
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
- V
DS
, Drain-to-Source Voltage (V)
91092_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
10
2
- I
D
, Drain Current (A)
Capacitance (pF)
10
1
V
GS
Top
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
2000
1600
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
1200
800
C
oss
10
0
20 µs Pulse Width
T
C
=
175 °C
10
-1
91092_02
400
C
rss
0
10
0
91092_05
10
0
10
1
10
1
- V
DS,
Drain-to-Source Voltage (V)
- V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
- V
GS
, Gate-to-Source Voltage (V)
I
D
= - 18 A
V
DS
= - 48 V
V
DS
= - 30 V
- I
D
, Drain Current (A)
25
°
C
175
°
C
10
1
16
12
8
4
For test circuit
see figure 13
10
0
4
91092_03
20 µs Pulse Width
V
DS
= - 25
V
5
6
7
8
9
10
0
0
91092_06
5
10
15
20
25
30
35
- V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S16-0754-Rev. C, 02-May-16
Document Number: 91092
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
20
- I
SD
, Reverse Drain Current (A)
10
1
175
°
C
25
°
C
- I
D
, Drain Current (A)
16
12
8
10
0
V
GS
= 0 V
0.0
1.0
2.0
3.0
4.0
5.0
4
0
25
91092_09
50
75
100
125
150
175
91092_07
- V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
10
3
5
Operation in this area limited
by R
DS(on)
R
G
V
DS
V
GS
D.U.T.
+
-
- 10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
- I
D
, Drain Current (A)
2
10
2
5
10
µs
100
µs
1
ms
10
ms
V
DD
2
10
5
Fig. 10a - Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
2
1
0.1
91092_08
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
2
5
1
2
5
10
2
5
10
2
2
5
10
3
V
GS
10 %
- V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
90 %
V
DS
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.5
0.2
0.1
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
10
-2
10
-5
91092_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. C, 02-May-16
Document Number: 91092
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z34, SiHF9Z34
www.vishay.com
Vishay Siliconix
I
AS
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
V
DS
-
+ V
DD
t
p
V
DD
- 10 V
t
p
0.01
Ω
V
DS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
1200
E
AS
, Single Pulse Energy (mJ)
1000
800
600
400
200
0
V
DD
= - 25 V
25
50
75
100
I
D
- 7.3 A
- 13 A
Bottom - 18 A
Top
125
150
175
91092_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12 V
- 10 V
Q
GS
Q
G
0.2 µF
0.3 µF
V
G
V
GS
- 3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
S16-0754-Rev. C, 02-May-16
Document Number: 91092
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
+
D.U.T.
-
Q
GD
V
DS
微控制器 MCU
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