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MURF1660CTG

产品描述MOSFET
产品类别分立半导体    二极管   
文件大小57KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MURF1660CTG概述

MOSFET

MURF1660CTG规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-220AB
包装说明LEAD FREE, PLASTIC, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数3
制造商包装代码221D-03
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time8 weeks
其他特性FREE WHEELING DIODE
应用ULTRA FAST RECOVERY POWER
外壳连接ISOLATED
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
最大非重复峰值正向电流100 A
元件数量2
相数1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压600 V
最大反向恢复时间0.06 µs
表面贴装NO
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间40
Base Number Matches1

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MURF1660CTG
Switch-mode Power
Rectifier
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
www.onsemi.com
Ultrafast 60 Nanosecond Recovery Times
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150°C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
This is a Pb−Free Package*
ULTRAFAST RECTIFIER
16 AMPERES, 600 VOLTS
1
2
3
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
MAXIMUM RATINGS
(Per Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150°C
Per Diode
Per Device
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz),
T
C
= 150°C
Non−repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
Operating Junction and Storage Temperature
RMS Isolation Voltage
(t = 0.3 second, R.H.
30%, T
A
= 25°C)
(Note 1) Per Figure 3
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
8
16
I
FM
16
A
Value
600
Unit
V
A
Y
WW
U1660
G
AKA
1
2
3
ISOLATED TO−220
CASE 221AH
MARKING
DIAGRAM
AYWW
U1660G
AKA
A
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
I
FSM
100
A
ORDERING INFORMATION
− 65 to +150
°C
V
4500
Device
MURF1660CTG
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
T
J
, T
stg
V
iso1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Proper strike and creepage distance must be provided.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 7
Publication Order Number:
MURF1660CT/D

 
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