®
BYT01-400
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
trr (max)
1A
400 V
150°C
1.4 V
25 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward & reverse recovery times
s
s
s
DESCRIPTION
The BYT01-400 which is using ST’s 400V planar
technology, is specially suited for switching mode
base drive & transistor circuits.
The device, which is available in axial (DO-15)
package, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
bs
O
T
j
Symbol
V
RRM
et
l
o
ro
P
e
uc
d
)-
(s
t
b
O
so
te
le
ro
P
uc
d
s)
t(
DO-15
BYT01-400
Parameter
Value
400
TI = 80°C
δ
= 0.5
1
30
- 65 to +150
150
Unit
V
A
A
°C
°C
Repetive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
I
F (AV)
I
FSM
T
stg
tp = 10ms Sinusoidal
October 2001 - Ed: 2A
1/5
BYT01-400
THERMAL PARAMETERS
Symbol
R
th(j-a)
Junction to ambient*
Parameter
Value
45
Unit
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameters
Reverse leakage current
Test Conditions
T
j
= 25°C
T
j
= 100°C
V
F
**
Forward voltage drop
T
j
= 25°C
T
j
= 100°C
I
F
= 1A
V
R
= V
RRM
Min.
Typ.
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.25 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
bs
O
et
l
o
tfr
V
FP
trr
ro
P
e
Parameter
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
0.1
1.0
s)
t(
Max.
20
0.5
1.5
1.4
Unit
µA
mA
V
Test Conditions
T
j
= 25°C
I
F
= 0.5A I
R
= 1A
I
rr
= 0.25A
I
F
= 1A dI
F
/dt = - 15A/µs
V
R
= 30V
Min.
Typ.
16
Max.
25
Unit
ns
Reverse recovery
time
55
Forward recovery
time
Forward recovery
voltage
T
j
= 25°C
I
F
= 1A dI
F
/dt = 50A/µs
VFR = 1.1 x V
F
max
I
F
= 1A dI
F
/dt = 50A/µs
60
ns
T
j
= 25°C
9.5
V
2/5
BYT01-400
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.8
1.6
1.4
1.2
1.0
δ
=1
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5)
IF(av)(A)
1.2
Rth(j-a)=Rth(j-l)
1.0
0.8
0.6
0.8
0.6
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
Rth(j-a)=100°C/W
0.4
0.2
IF(av)(A)
δ
=tp/T
Tamb(°C)
tp
0.0
0
25
50
75
Fig. 3:
Thermal resistance versus lead length.
Fig. 4:
Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads = 10mm).
Rth(°C/W)
110
Rth(j-a)
1.0
0.9
100
90
80
70
60
50
40
30
20
10
0
5
10
Rth(j-l)
bs
O
100.0
10.0
1.0
Fig. 5:
Forward voltage drop versus forward current.
et
l
o
r
P
e
Tj=100°C
(Typical values)
Lleads(mm)
15
od
uc
20
s)
t(
O
-
25
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
so
b
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
Zth(j-a)/Rth(j-a)
te
le
ro
P
uc
d
100
s)
t(
125
150
T
tp(s)
1.E+00
1.E+01
δ
=tp/T
1.E+02
tp
1.E-01
1.E+03
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
10
9
8
7
F=1MHz
Vosc=30mV
Tj=25°C
IFM(A)
Tj=100°C
(Maximum values)
6
5
4
3
Tj=25°C
(Maximum values)
2
1
0
VFM(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VR(V)
1
10
100
1000
3/5
BYT01-400
Fig. 7:
Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
100
IF=1A
Tj=100°C
Fig. 8.
Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
15.0
IF=1A
Tj=100°C
80
12.5
10.0
60
7.5
40
5.0
20
2.5
dIF/dt(A/µs)
0
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/µs)
0.0
0
10
20
30
40
50
Fig. 9:
Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
2.5
IF=1A
VR=200V
Fig. 10:
Dynamic parameters versus junction
temperature.
%
300
2.0
1.5
Tj=100°C
1.0
0.5
0.0
1
bs
O
35
30
25
20
15
10
5
Fig. 11:
Non repetitive surge peak current versus
number of cycles.
IFSM(A)
Tj initial=25°C
et
l
o
r
P
e
dIF/dt(A/µs)
10
od
uc
Tj=25°C
s)
t(
O
-
100
250
so
b
IF=1A
dIF/dt=-50A/µs
VR=30V
te
le
ro
P
uc
d
60
70
s)
t(
80
90
100
Qrr
trr
200
IRM
150
Tj(°C)
100
25
50
75
100
125
150
Number of cycles
0
1
10
100
1000
4/5
BYT01-400
PACKAGE MECHANICAL DATA
DO-15
C
A
C
D
B
DIMENSIONS
REF.
Millimeters
Min.
A
B
C
D
6.05
2.95
26
0.71
Inches
Min.
0.238
0.116
1.024
0.028
Max.
6.75
3.53
31
0.88
Max.
0.266
0.139
1.220
Ordering code
BYT01-400
BYT01-400RL
s
bs
O
s
s
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Bending method: Application note AN1471
et
l
o
ro
P
e
Marking
uc
d
s)
t(
0.035
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Package
DO-15
DO-15
Weight
0.4 g
0.4 g
Base qty
1000
6000
Delivery mode
Ammopack
Tape & Reel
BYT01-400
BYT01-400
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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