AUTOMOTIVE GRADE
AUIRFS4010-7P
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
100V
3.3m
4.0m
190A
Features
Advanced Process Technology
Ultra Low On-Resistance
Enhanced dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D
2
Pak 7 Pin
AUIRFS4010-7P
G
Gate
D
Drain
S
Source
Base Part Number
AUIRFS4010-7P
Package Type
D
2
Pak 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFS4010-7P
AUIRFS4010-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
190
130
740
380
2.5
± 20
330
See Fig.14,15, 22a, 22b
26
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
R
G
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
100
–––
–––
2.0
210
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.11
3.3
–––
–––
2.1
–––
–––
–––
–––
150
36
48
102
19
56
100
48
9830
650
260
730
740
–––
–––
4.0
4.0
–––
–––
20
250
100
-100
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
AUIRFS4010-7P
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 110A
V
V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 25V, I
D
= 110A
V
DS
= 100V, V
GS
= 0V
µA
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
nA
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
I
D
= 110A
V
DS
= 50V
nC
V
GS
= 10V
V
DD
= 65V
I
D
= 110A
ns
R
G
= 2.7
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
pF
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 110A,V
GS
= 0V
T
J
= 25°C
V
DD
= 85V
ns
T
J
= 125°C
I
F
= 110A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Q
rr
I
RRM
t
on
Notes:
Typ. Max. Units
–––
–––
–––
60
67
150
180
4.7
186
740
1.3
–––
–––
–––
–––
–––
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.052mH, R
G
= 25, I
AS
= 110A, V
GS
=10V. Part not recommended for use above this value.
I
SD
110A,
di/dt
1310A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
JC
value shown is at time zero
R
2
2015-10-27
AUIRFS4010-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
1
4.0V
0.1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
4.0V
10
10
100
60µs PULSE WIDTH
Tj = 175°C
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Fig. 2
Typical Output Characteristics
2.5
R DS(on) , Drain-to-Source On Resistance
ID = 110A
VGS = 10V
2.0
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
T J = 25°C
1.5
1
VDS = 50V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig. 4
Normalized On-Resistance vs. Temperature
14.0
ID = 110A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
25
50
C, Capacitance (pF)
10000
Ciss
VDS = 80V
VDS = 50V
1000
Coss
Crss
100
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
75 100 125 150 175 200 225
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2015-10-27
1000
AUIRFS4010-7P
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD , Source-to-Drain Voltage (V)
200
180
160
ID, Drain Current (A)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
125
Id = 5mA
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Temperature ( °C )
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
6.0
5.0
4.0
Energy (µJ)
Fig 10.
Drain-to-Source Breakdown Voltage
1400
EAS , Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
25
50
75
100
ID
TOP
21A
38A
BOTTOM 110A
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60 70 80 90 100 110
VDS, Drain-to-Source Voltage (V)
125
150
175
Starting T J , Junction Temperature (°C)
Fig 11.
Typical C
OSS
Stored Energy
4
Fig 12.
Maximum Avalanche Energy vs. Drain Current
2015-10-27
1
Thermal Response ( Z thJC ) °C/W
AUIRFS4010-7P
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
J
J
1
1
R
1
R
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
4
C
Ri (°C/W)
0.02001
0.05145
0.19436
I
(sec)
0.000025
0.000094
0.002047
0.01
2
3
4
Ci=
iRi
Ci=
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.13433
0.012818
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Avalanche Current vs. Pulse width
400
350
EAR , Avalanche Energy (mJ)
300
250
200
150
100
50
0
25
50
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 110A
75
100
125
150
175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 13, 14).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/
Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
2015-10-27
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
