PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
Features
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COLLECTOR
3
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
Symbol
V
CEO
Value
30
40
60
75
5.0
6.0
600
625
5.0
1.5
12
−55
to +150
Unit
Vdc
2
BASE
1
EMITTER
Collector-Base Voltage
V
CBO
Vdc
Emitter-Base Voltage
V
EBO
Vdc
TO−92
CASE 29
STYLE 1
12
1
2
Collector Current
−
Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
I
C
P
D
mAdc
mW
mW/°C
W
mW/°C
°C
P
D
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
T
J
, T
stg
MARKING DIAGRAM
Max
200
83.3
Unit
°C/W
°C/W
PN2222
Y
WW
G
PN2222A
PN
2222
YWW
G
G
PN2
222A
YWW
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Case
Symbol
R
qJA
R
qJC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
February, 2010
−
Rev. 5
1
Publication Order Number:
PN2222/D
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
=
−55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 1)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 1)
Collector
−Emitter
Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base
−Emitter
Saturation Voltage (Note 1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product (Note 2)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
PN2222
PN2222A
PN2222A
PN2222A
PN2222A
PN2222A
PN2222A
PN2222A
PN2222
PN2222A
f
T
250
300
−
−
−
2.0
0.25
−
−
50
75
−
−
8.0
30
25
8.0
1.25
8.0
4.0
300
375
MHz
h
FE
35
50
75
35
100
50
30
40
−
−
−
−
−
0.6
−
−
−
−
−
−
300
−
−
−
0.4
0.3
1.6
1.0
1.3
1.2
2.6
2.0
−
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222A
PN2222A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
30
40
60
75
5.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
10
0.01
0.01
10
10
100
20
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
I
EBO
I
BL
nAdc
nAdc
PN2222A only
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
V
CE(sat)
Vdc
V
BE(sat)
Vdc
C
obo
C
ibo
pF
pF
h
ie
kW
h
re
X 10
−
4
h
fe
−
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2
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
SMALL−SIGNAL CHARACTERISTICS
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (PN2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
=
−0.5
Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc) (Figure 1)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
d
t
r
t
s
t
f
−
−
−
−
10
25
225
60
ns
ns
ns
ns
PN2222A
PN2222A
PN2222A
PN2222A
h
oe
5.0
25
−
−
35
200
150
4.0
dB
mMhos
Symbol
Min
Max
Unit
rb′C
c
NF
ps
ORDERING INFORMATION
Device
PN2222G
PN2222AG
PN2222ARLRA
PN2222ARLRAG
PN2222ARLRM
PN2222ARLRMG
PN2222ARLRPG
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
-2 V
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
1 kW
< 2 ns
200
+16 V
0
C
S
* < 10 pF
-14 V
< 20 ns
1k
1N914
C
S
* < 10 pF
1.0 to 100
ms,
DUTY CYCLE
≈
2.0%
+ 30 V
200
-4 V
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
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3
PN2222, PN2222A
1000
700
500
hFE , DC CURRENT GAIN
300
200
25°C
100
70
50
30
20
10
0.1
-55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
T
J
= 125°C
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
0.6
I
C
= 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
500
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 2.0 V
t
d
@ V
EB(off)
= 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
300
500
t′
s
= t
s
- 1/8 t
f
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t
f
Figure 5. Turn
−On
Time
Figure 6. Turn
−Off
Time
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4
PN2222, PN2222A
10
8.0
NF, NOISE FIGURE (dB)
I
C
= 1.0 mA, R
S
= 150
W
500
mA,
R
S
= 200
W
100
mA,
R
S
= 2.0 kW
50
mA,
R
S
= 4.0 kW
R
S
= OPTIMUM
R
S
=
SOURCE
R
S
=
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
I
C
= 50
mA
100
mA
500
mA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30
20
CAPACITANCE (pF)
C
eb
10
7.0
5.0
C
cb
3.0
2.0
0.1
500
V
CE
= 20 V
T
J
= 25°C
300
200
100
70
50
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
3.0
5.0 7.0 10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
70 100
Figure 9. Capacitances
Figure 10. Current−Gain Bandwidth Product
1.0
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 10 V
0.4
1.0 V
COEFFICIENT (mV/
°
C)
V, VOLTAGE (VOLTS)
+0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
V
CE(sat)
@ I
C
/I
B
= 10
- 2.5
R
qVB
for V
BE
R
qVC
for V
CE(sat)
0.2
0
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
500 1.0 k
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
I
C
, COLLECTOR CURRENT (mA)
500
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
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