MUN5311DW1,
NSBC114EPDXV6,
NSBC114EPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 10 kW
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PIN CONNECTIONS
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
(2)
R
2
(1)
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B
1
11 MG
G
SOT−563
CASE 463A
1
11 M
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−963
CASE 527AD
LM
1
ORDERING INFORMATION
Device
MUN5311DW1T1G,
SMUN5311DW1T1G*
MUN5311DW1T2G,
SMUN5311DW1T2G*
SMUN5311DW1T3G
NSBC114EPDXV6T1G,
NSVBC114EPDXV6T1G*
Package
SOT−363
SOT−363
SOT−363
SOT−563
Shipping
†
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
4,000/Tape & Reel
11/L
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
©
Semiconductor Components Industries, LLC, 2014
June, 2017
−
Rev. 3
1
Publication Order Number:
DTC114EP/D
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
ORDERING INFORMATION
Device
NSBC114EPDXV6T5G
NSBC114EPDP6T5G
Package
SOT−563
SOT−963
Shipping
†
8,000/Tape & Reel
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Characteristic
MUN5311DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 1)
T
A
= 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5311DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
Junction and Storage Temperature Range
NSBC114EPDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 1)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC114EPDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 1)
T
A
= 25°C
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC114EPDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
(Note 4)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Total Device Dissipation
(Note 4)
T
A
= 25°C
(Note 5)
Derate above 25°C
(Note 4)
(Note 5)
P
D
339
408
2.7
3.3
MW
mW/°C
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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
THERMAL CHARACTERISTICS
Characteristic
NSBC114EPDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 3)
Thermal Resistance,
Junction to Ambient
(Note 5)
1.
2.
3.
4.
5.
(Note 4)
R
qJA
369
306
−55
to +150
°C/W
Symbol
Max
Unit
Junction and Storage Temperature Range
FR−4 @ Minimum Pad.
FR−4 @ 1.0
×
1.0 Inch Pad.
Both junction heated values assume total power is sum of two equally powered channels.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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3
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C both polarities Q
1
(PNP) & Q
2
(NPN), unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 6)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 6)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 6)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
(NPN)
(V
CE
= 5.0 V, I
C
= 100
mA)
(PNP)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 10 mA) (NPN)
(V
CE
= 0.2 V, I
C
= 10 mA) (PNP)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
h
FE
V
CE(sat)
V
i(off)
35
−
−
−
−
−
−
4.9
7.0
0.8
60
−
1.2
1.2
2.0
2.2
−
−
10
1.0
−
0.25
−
−
−
−
0.2
−
13
1.2
V
Vdc
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
V
i(on)
Vdc
V
OL
V
OH
R1
R
1
/R
2
Vdc
Vdc
kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6
TYPICAL CHARACTERISTICS
−
NPN TRANSISTOR
MUN5311DW1, NSBC114EPDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1000
V
CE
= 10 V
T
A
=
−25°C
75°C
h
FE
, DC CURRENT GAIN
25°C
0.1
25°C
T
A
= 75°C
−25°C
I
C
/I
B
= 10
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
3.6
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
10
T
A
= 75°C
−25°C
25°C
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
25°C
V
in
, INPUT VOLTAGE (V)
−25°C
T
A
= 75°C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
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