IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
参数名称 | 属性值 |
产品种类 Product Category | IGBT Transistors |
制造商 Manufacturer | Infineon(英飞凌) |
技术 Technology | Si |
封装 / 箱体 Package / Case | TO-220-3 |
安装风格 Mounting Style | Through Hole |
Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V |
Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | +/- 20 V |
Continuous Collector Current at 25 C | 18 A |
Pd-功率耗散 Pd - Power Dissipation | 70 W |
最小工作温度 Minimum Operating Temperature | - 40 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
系列 Packaging | Tube |
Gate-Emitter Leakage Current | 100 nA |
资格 Qualification | AEC-Q100 |
工厂包装数量 Factory Pack Quantity | 500 |
单位重量 Unit Weight | 0.081130 oz |
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