IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-22
0A
B
BT152-800R
SCR
Rev. 2 — 9 June 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package
intended for use in applications requiring very high inrush current capability and high
thermal cycling performance.
1.2 Features and benefits
High thermal cycling performance
High voltage capability
Planar passivated for voltage
ruggedness and reliability
Very high current surge capability
1.3 Applications
Ignition circuits
Motor control
Protection circuits e.g. SMPS inrush
current
Voltage regulation
1.4 Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
Quick reference data
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
non-repetitive peak
on-state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; see
Figure 4;
see
Figure 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I
T(AV)
I
T(RMS)
average on-state current
RMS on-state current
half sine wave; T
mb
≤
103 °C;
see
Figure 3
half sine wave; see
Figure 1;
see
Figure 2
V
D
= 12 V; I
T
= 0.1 A;
T
j
= 25 °C; see
Figure 7
Conditions
Min
-
-
-
Typ
-
-
-
Max Unit
800
800
200
V
V
A
-
-
-
-
-
-
220
13
20
A
A
A
Static characteristics
I
GT
gate trigger current
-
3
32
mA
NXP Semiconductors
BT152-800R
SCR
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
K
A
G
A
cathode
anode
gate
mounting base; connected to anode
mb
A
G
sym037
Simplified outline
Graphic symbol
K
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BT152-800R
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
4. Limiting values
Table 4.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
half sine wave; T
mb
≤
103 °C; see
Figure 3
half sine wave; see
Figure 1;
see
Figure 2
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
see
Figure 4;
see
Figure 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10 ms; sine-wave pulse
I
T
= 50 A; I
G
= 200 mA; dI
G
/dt = 200 mA/µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
Max
800
800
13
20
200
220
200
200
5
5
20
0.5
150
125
Unit
V
V
A
A
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT152-800R
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
2 of 12
NXP Semiconductors
BT152-800R
SCR
25
I
T(RMS)
(A)
20
003aag276
I
T(RMS)
(A) 45
40
35
50
003aag277
15
30
25
10
20
15
5
10
5
0
-50
0
50
100
T
mb
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig 1.
RMS on-state current as a function of mounting
base temperature; maximum values
30
Fig 2.
RMS on-state current as a function of surge
duration; maximum values
003aag275
92
T
mb(max)
(°C)
P
tot
(W)
25
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
a = 1.57
2.2
2.8
4
1.9
20
α
103
15
10
114
5
0
0
2
4
6
8
10
12
I
T(AV)
(A)
14
125
Fig 3.
Total power dissipation as a function of average on-state current; maximum values
BT152-800R
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
3 of 12
NXP Semiconductors
BT152-800R
SCR
220
I
TSM
200
(A)
180
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
I
T
003aad221
I
TSM
t
t
p
T
j(init)
= 25
°C
max
number of cycles
10
4
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aad222
10
3
I
TSM
(A)
(1)
10
2
I
T
I
TSM
10
10
−5
t
t
p
T
j(init)
= 25
°C
max
10
−4
10
−3
t
p
(s)
10
−2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT152-800R
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 9 June 2011
4 of 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
