PD - 97073B
IRGB4060DPbF
INSULATED GATE BIPOLAR TRANSISTOR
WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5µs SCSOA
Square RBSOA
100% of The Parts Tested for 4X Rated Current (I
LM
)
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
G
E
C
V
CES
= 600V
I
C
=
8.0A, T
C
= 100°C
t
sc
> 5µs, T
jmax
= 175°C
n-channel
C
V
CE(on) typ.
=
1.55V
Benefits
•
High Efficiency in a Wide Range of Applications
•
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
•
Rugged Transient Performance for Increased Reliability
•
Excellent Current Sharing in Parallel Operation
•
Low EMI
E
G
C
TO-220AB
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
V
GE
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
600
16
8
32
32
16
8
32
± 20
± 30
99
50
-55 to + 175
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
e
Junction-to-Case - Diode
e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
e
Weight
0.5
80
1.44
Min.
Typ.
Max.
1.51
3.66
Units
°C/W
g
1
www.irf.com
9/22/06
IRGB4060DPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
Min. Typ. Max. Units
600
—
—
—
—
4.0
—
—
—
—
—
—
—
-18
5.6
1
400
1.80
1.30
—
—
0.3
1.55
2.00
1.95
—
—
1.85
—
—
6.5
—
—
25
—
2.80
—
±100
nA
V
V
Conditions
V
GE
= 0V,I
c
=100 µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
o
V/°C V
GE
= 0V, I
c
= 250 µA ( 25 -175 C )
I
C
= 8A, V
GE
= 15V, T
J
= 25°C
f
Ref.Fig
f
CT6
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆TJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
V
I
C
= 8A, V
GE
= 15V, T
J
= 150°C
I
C
= 8A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 250 µA
5,6,7,9,
10 ,11
9,10,11,12
gfe
I
CES
V
FM
I
GES
o
mV/°C V
CE
= V
GE
, I
C
= 250 µA ( 25 -175 C )
S V
CE
= 50V, I
C
= 8A, PW =80µs
µA
µA
V
V
GE
= 0V,V
CE
= 600V
V
GE
= 0v, V
CE
= 600V, T
J
=175°C
I
F
= 8A
I
F
= 8A, T
J
= 175°C
V
GE
= ± 20 V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
19
5
8
70
145
215
30
15
95
20
165
240
405
28
17
117
35
535
45
15
29
7
12
115
195
310
39
21
106
26
—
—
—
—
—
—
—
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
ns
µJ
ns
µJ
nC
I
C
= 8A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig
24
CT1
I
C
= 8A, V
CC
= 400V, V
GE
= 15V
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail and diode reverse recovery
CT4
I
C
= 8A, V
CC
= 400V
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 25°C
I
C
= 8A, V
CC
= 400V, V
GE
= 15V
R
G
= 47Ω, L=1mH, L
S
= 150nH, T
J
= 175°C
Energy losses include tail and diode reverse recovery
13,15
CT4
WF1,WF2
14,16
CT4
WF1,WF2
CT4
I
C
= 8A, V
CC
= 400V
R
G
= 47Ω, L=1mH, L
S
= 150nH
T
J
= 175°C
22
T
J
= 175°C, I
C
= 32A
FULL SQUARE
V
CC
= 480V, Vp =600V
R
G
= 47Ω, V
GE
= +15V to 0V
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
5
165
60
14
µs
µJ
ns
A
V
CC
= 400V, Vp =600V
R
G
= 47Ω, V
GE
= +15V to 0V
T
J
= 175 C
V
CC
= 400V, I
F
= 8A
V
GE
= 15V, Rg = 47Ω, L=1mH, L
S
=150nH
o
4
CT2
22, CT3
WF4
17,18,19
20,21
WF3
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 100 µH, R
G
= 47
Ω.
Pulse width limited by max. junction temperature.
R
θ
is measured at T
J
approximately 90°C
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely
2
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IRGB4060DPbF
18
16
14
12
IC (A)
120
100
80
Ptot (W)
10
8
6
4
2
0
0
20
40
60
80 100 120 140 160 180
TC (°C)
60
40
20
0
0
20
40
60
80 100 120 140 160 180
TC (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
100
100
Fig. 2
- Power Dissipation vs. Case
Temperature
10 µs
10
IC (A)
IC A)
1000
100 µs
1
1ms
DC
0.1
1
10
VCE (V)
100
10
1
10
100
1000
VCE (V)
Fig. 3
- Forward SOA,
T
C
= 25°C; T
J
≤
175°C
30
25
20
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
CE
= 15V
30
25
20
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
15
10
5
0
0
2
4
VCE (V)
6
8
15
10
5
0
0
2
4
VCE (V)
6
8
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
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3
IRGB4060DPbF
30
VGE = 18V
25
20
ICE (A)
80
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
70
60
50
40
30
20
-40°C
25°C
175°C
15
10
5
0
0
2
4
VCE (V)
6
8
10
0
0.0
1.0
2.0
VF (V)
3.0
4.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80µs
20
18
16
14
VCE (V)
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
20
18
16
ICE = 4.0A
ICE = 16A
VCE (V)
12
10
8
6
4
2
0
5
10
ICE = 8.0A
14
12
10
8
6
4
2
0
ICE = 4.0A
ICE = 16A
ICE = 8.0A
15
VGE (V)
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
35
30
TJ = 25°C
TJ = 175°C
ICE = 4.0A
ICE = 16A
25
ICE (A)
12
10
8
6
4
2
0
5
10
ICE = 8.0A
20
15
10
5
0
15
VGE (V)
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
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IRGB4060DPbF
500
450
400
Swiching Time (ns)
1000
350
Energy (µJ)
100
tdOFF
tF
tdON
300
250
200
150
100
50
0
0
EOFF
EON
10
tR
1
5
10
I C (A)
15
20
0
5
10
15
20
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 1mH; V
CE
= 400V, R
G
= 47Ω; V
GE
= 15V.
350
300
250
1000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L=1mH; V
CE
= 400V
R
G
= 47Ω; V
GE
= 15V
EOFF
Swiching Time (ns)
Energy (µJ)
tdOFF
100
200
150
100
50
0
0
25
50
EON
tdON
tR
tF
10
75
100
125
0
25
50
75
100
125
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 1mH; V
CE
= 400V, I
CE
= 8A; V
GE
= 15V
30
25
RG (Ω)
Fig. 16-
Typ. Switching Time vs. R
G
T
J
= 175°C; L=1mH; V
CE
= 400V
I
CE
= 8A; V
GE
= 15V
25
R G =10
Ω
RG =22
Ω
RG =47
Ω
RG = 100
Ω
IRR (A)
20
20
IRR (A)
15
15
10
10
5
5
0
0
5
10
15
20
0
0
25
50
75
100
125
IF (A)
RG (Ω)
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 175°C; I
F
= 8.0A
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