SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1.60 mm
D
P-Channel MOSFET
G
Part # code
BGX
XXX
Lot Traceability
and Date code
G
Marking Code
• Load Switch for Portable Devices
1.60 mm
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
d, e
Symbol
V
DS
V
GS
I
D
Limit
-8
±5
- 9
a
- 9
a
- 5.8
b, c
- 4.6
b, c
- 15
- 9
a
- 2
b, c
13
8.4
2.4
b, c
1.6
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
I
DM
I
S
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t
≤
5s
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
SiB417EDK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 5.8 A
V
GS
= - 2.5 V, I
D
= - 5.0 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 1.8 V, I
D
= - 1.5 A
V
GS
= - 1.5 V, I
D
= - 0.75 A
V
GS
= - 1.2 V, I
D
= - 0.1 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 4.6 A, V
GS
= 0 V
- 0.8
32
13
14
18
T
C
= 25 °C
-9
- 15
- 1.2
48
20
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 4 V, R
L
= 0.87
Ω
I
D
≅
- 4.6 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
1.9
V
DS
= - 4 V, V
GS
= - 5 V, I
D
= - 5.8 A
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 5.8 A
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
565
215
138
8
7.3
0.95
1.35
9.5
12
31
30
17
19
18
46.5
45
26
ns
Ω
12
11
nC
pF
g
fs
V
DS
= - 4 V, I
D
= - 5.8 A
- 15
0.042
0.058
0.081
0.096
0.150
11
0.058
0.080
0.100
0.130
0.250
S
Ω
- 0.35
-8
- 6.1
2.1
-1
± 100
-1
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
GS
= 5
V
thru 2.5
V
12
I
D
- Drain Current (A)
V
GS
= 2
V
I
D
- Drain Current (A)
1.6
2.0
9
1.2
T
C
= 25 °C
0.8
T
C
= 125 °C
0.4
6
V
GS
= 1.5
V
3
V
GS
= 1
V
0
0
1
2
3
4
5
T
C
= - 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.4
1000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
800
0.3
C - Capacitance (pF)
C
iss
600
0.2
V
GS
= 1.5
V
V
GS
= 1.2
V
0.1
V
GS
= 1.8
V
V
GS
= 2.5
V
400
C
oss
200
C
rss
0
0.0
0
3
V
GS
= 4.5
V
6
9
12
15
0
2
4
6
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 5.8 A
V
GS
- Gate-to-Source
Voltage
(V)
4
V
DS
= 4
V
3
V
DS
= 6.4
V
2
R
DS(on)
- On-Resistance
(Normalized)
1.2
1.4
Capacitance
V
GS
= - 4.5
V,
I
D
= - 5.8 A
V
GS
= - 2.5
V,
I
D
= - 5 A
1.0
0.8
1
0
0
2
4
6
8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.20
I
D
= 5.8 A
R
DS(on)
- On-Resistance (Ω)
0.16
I
S
- Source Current (A)
10
0.12
T
J
= 150 °C
1
T
J
= 25 °C
0.08
T
J
= 125 °C
0.04
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Soure-Drain Diode Forward Voltage
5000
10 000
1000
On-Resistance vs. Gate-to-Source Voltage
4000
100
I
GSS
at 150 °C
I
GSS
(µA)
I
GSS
(µA)
3000
10
1
0.1
2000
1000
I
GSS
at 25 °C
0
0
1
2
3
4
5
6
7
8
0.01
0.001
0.1
I
GSS
at 25 °C
1
10
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate Source Voltage vs. Gate Current
0.7
20
Gate Source Voltage vs. Gate Current
0.6
I
D
= 250
µA
V
GS(th)
(V)
0.5
Power (W)
- 25
0
25
50
75
100
125
150
15
10
0.4
0.3
5
0.2
- 50
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
SiB417EDK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
0.1
1
10
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Case
15
16
12
12
I
D
- Drain Current (A)
Package Limited
Power (W)
0
25
50
75
100
125
150
9
8
6
4
3
0
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**
1.5
Power Junction-to-Case
1.2
Power (W)
0.9
0.6
0.3
** The power dissipation P
D
is based on T
J(max)
= 150 °C, using
0.0
0
25
50
75
100
125
150
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
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