RF2374
3V LOW NOISE AMPLIFIER
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.55mm
NC
Features
8
RF IN 1
Low Noise and High Intercept
Point
Adjustable Bias Current
Power Down Control
Low Insertion Loss Bypass
Feature
1.8V to 4V Operation (See
Note: Page 2)
800MHz to 3.8GHz
Operation
ESD Class 1B
WiFi LNA with Bypass Feature
CDMA PCS LNA with Bypass
Feature
GPS LNA with Bypass Feature
General Purpose
Amplification
WiMAX LNA with Bypass
Function
CDMA 800 LNA
CMMB LNA
LTE Bands LNA
NC
7
6 RF OUT
Logic
Control
GND 2
3
VREF
5 GND
4
Applications
Functional Block Diagram
Product Description
The RF2374 is a switchable low noise amplifier with a high dynamic range
designed for digital cellular and WiFi applications. The device functions as
an outstanding front end low noise amplifier with I
CC
as low as 3mA. The
bias current may be set externally. The IC is featured in a
2.2mmx2.2mmx0.6mm module-compatible plastic package.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS140519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
GAIN
SELECT
1 of 15
RF2374
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level at F<2.3GHz
Input RF Level at F>2.3GHz
Current Drain, I
CC
Operating Ambient Temperature
Storage Temperature
Rating
-0.5 to +6.0
+5 (see note)
+10 (see note)
32
-40 to +85
-40 to +150
Unit
V
DC
dBm
dBm
mA
°C
°C
Ca u t io n! ESD sensitive de vice.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical
performance or functional operation of the device under Absolute Maximum Rating
conditions is not implied.
RoHS status based on EU Directive 201 1/65/EU (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However,
no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for
any infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
NOTE: Exceeding any one or a combination of the above maximum rating
limits may cause permanent damage. Input RF transients to +15dBm will not
harm the device. For sustained operation at inputs >+5dBm, a small dropping
resistor is recommended in series with the V
CC
in order to limit the current due
to self-biasing to <32mA. Furthermore, while the LNA is in Bypass Mode, and
for sustained operation at the input, +10dBm is the maximum recommended
power level for Frequencies above 2300MHz. +5dBm is the maximum
recommended power level for Frequencies <2300MHz.
Parameter
Operating Range
Frequency Range
Min.
50
Specification
Typ.
Max.
4000
Unit
MHz
Condition
T
AMB
=+25°C, V
CC
=3.0V
WiBRO/WiFi/WiMAX Low
Noise Amplifier
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Input IP3
IP1dB
Current Drain
BYPASS MODE (Low Gain)
Gain
Input IP3
Current Drain
-4.0
+20
-3.0
+21
2.8
1575
17.5
1.2
+7.0
3100
9.0
+9.0
-4.0
20.5
3500
11.0
1.6
+10.0
-3.0
22.0
-2.5
3800
13.0
2.5
3.0
-2.0
dB
dBm
mA
MHz
dB
dB
dBm
MHz
dB
dB
dBm
dB
dBm
IIP3 will improve if I
CC
is raised above 7mA.
I
CC
=7mA
I
CC
=6.5mA, I
CC
+I
REF
=7.5mA
Current drain includes I
CC
+I
REF
+7
0
7
12.5
14.5
1.3
+9
16.0
1.5
dB
dB
dBm
dBm
mA
Gain Select>1.6V
Note: Bypass mode insertion loss will degrade
gradually as V
CC
goes below 2.7V.
IIP3 will improve if I
CC
is raised above 7mA.
2300
2700
MHz
Gain Select<0.8V, V
REF
=3V, T=+25°C
GPS Low Noise Amplifier
Frequency
Gain
Noise Figure
Input IP3
WiMAX Low Noise Amplifier
Frequency
Gain
Noise Figure
Input IP3
BYPASS MODE (Low Gain)
Gain
Input IP3
2 of 15
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140519
RF2374
Parameter
CDMA Low Noise Amplifier
HIGH GAIN MODE
Frequency
Gain
Noise Figure
Input IP3
Current Drain
869
19
1.0
+2.0
7
894
MHz
dB
dB
dBm
mA
IIP3 will improve if I
CC
is raised above 7mA.
Min.
Specification
Typ.
Max.
Unit
Condition
Low Band LNA
HIGH GAIN MODE
Frequency
Gain
Gain
Noise Figure
Noise Figure
Input IP3
50
20
19
2.5
1.5
+2.0
1750
15
8
16
1.1
9
7
-3
17
-2
18
2.7
704
17
-3
18
1.4
0
7
-5
14
-4
15
5
6.6
1.6
3.5
950
1.3
10
2050
950
MHz
dB
dB
dB
dB
dBm
MHz
Gain Select<0.8V
dB
dB
dBm
mA
Gain Select>1.6V
dB
dBm
dB
V
CC
=2.2V, 25°C
MHz
Gain Select<0.8V
dB
dB
dBm
mA
dB
dBm
dB
IIP3 will improve if I
CC
is raised above 7mA
IIP3 will improve if I
CC
is raised above 7mA
88MHz
870MHz
88MHz
870MHz
IIP3 will improve if I
CC
is raised above 7mA.
V
CC
=2.2V, 25°C
PCS and LTE Band LNA
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Input IP3
Current Drain
BYPASS MODE (Low Gain)
Gain
Input IP3
Noise Figure
LTE Low Band LNA
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Input IP3
Current Drain
BYPASS MODE (Low Gain)
Gain
Input IP3
Noise Figure
DS140519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 15
RF2374
Parameter
Power Supply
Voltage (V
CC
)
Gain Select Low Level
(High Gain Mode)
Gain Select High Level
(Bypass Mode)
Gain Select On/Off Time
Power Down
0
1.6
<150
5
3
0.8
V
V
V
nSec
μA
High Gain mode.
Gain Select<0.8V, V
REF
=3V (typical)
Low Gain mode.
Gain Select>1.6V, V
REF
: see bias note 2
(C1 values range from 3 to 10pF),
Temp=-40°C to +85°C, and over process
Gain Select<0.8V, V
REF
=0V, V
CC
=3.0V
Min.
Specification
Typ.
Max.
Unit
Condition
Bias note: Due to the presence of ESD protection circuitry on the RF2374, the maximum allowable collector bias voltage (pin 6) is 4.0V. Higher
supply voltages such as 5V are permissible if a series resistor is used to drop V
CC
to <4.0V for a given I
CC
.
Bias note 2: In bypass mode, V
REF
is essentially a “don’t care” condition. Pulling V
REF
low when in bypass mode does conserve the small 1mA
to 2mA supplied by V
REF
.
4 of 15
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140519
RF2374
Pin
1
Function
RF IN
Description
RF input pin. This part is designed such that 50Ω is the optimal source
impedance for best noise figure. Best noise figure is achieved with only a
series capacitor on the input.
RF IN
Interface Schematic
To Bias
Circuit
RF OUT
2
3
GND1
VREF
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
For low noise amplifier applications, this pin is used to control the bias cur-
rent. An external resistor can be used to set the bias current for any V
BIAS
voltage. This device will have good gain and noise figure with I
CC
as low as
3mA.
VREF
4
GAIN SELECT
This pin selects high gain and bypass modes.
Gain Select<0.8V, high gain.
Gain Select>1.6V, low gain.
See GND1.
5
GND2
6
7
8
Pkg
Gnd
RF OUT
NC
NC
GND
Amplifier output pin. This pin is an open-collector output. It must be biased
to V
CC
through a choke or matching inductor.
Not connected.
Not connected.
This pad should be connected to the ground plane by vias directly under
the device.
Package Drawing
DS140519
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 15
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
