Infrared Emitters 24deg, 1.8V, Coaxial 0.7 us Rise and Fall
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Infineon(英飞凌) |
零件包装代码 | TO-252AA |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
其他特性 | AVALANCHE RATED |
雪崩能效等级(Eas) | 20 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V |
最大漏极电流 (Abs) (ID) | 0.8 A |
最大漏极电流 (ID) | 0.8 A |
最大漏源导通电阻 | 6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-252AA |
JESD-30 代码 | R-PSSO-G2 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 11 W |
最大脉冲漏极电流 (IDM) | 1.6 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin (Sn) |
端子形式 | GULL WING |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管元件材料 | SILICON |
SPD01N60C3 | SPU01N60C3 | SPD01N60C3BTMA1 | SPU01N60C3BKMA1 | SPD01N60C3XT | |
---|---|---|---|---|---|
描述 | Infrared Emitters 24deg, 1.8V, Coaxial 0.7 us Rise and Fall | MOSFET LOW POWER_LEGACY | MOSFET LOW POWER_LEGACY | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | GREEN, PLASTIC, TO-251, IPAK-3 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | compliant | not_compliant | not_compliant | not_compliant | compliant |
其他特性 | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED | AVALANCHE RATED |
雪崩能效等级(Eas) | 20 mJ | 20 mJ | 20 mJ | 20 mJ | 20 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 600 V | 600 V | 600 V | 600 V | 600 V |
最大漏极电流 (ID) | 0.8 A | 0.8 A | 0.8 A | 0.8 A | 0.8 A |
最大漏源导通电阻 | 6 Ω | 6 Ω | 6 Ω | 6 Ω | 6 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-252AA | TO-251AA | TO-252AA | TO-251AA | TO-252AA |
JESD-30 代码 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 | R-PSIP-T3 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 3 | 2 | 3 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A |
表面贴装 | YES | NO | YES | NO | YES |
端子形式 | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
是否无铅 | 不含铅 | 不含铅 | 不含铅 | 含铅 | - |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | - |
零件包装代码 | TO-252AA | TO-251AA | TO-252AA | TO-251AA | - |
针数 | 3 | 3 | 3 | 3 | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - |
外壳连接 | DRAIN | - | DRAIN | - | DRAIN |
JESD-609代码 | e3 | e3 | e3 | e3 | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | 260 | NOT SPECIFIED | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
端子面层 | Tin (Sn) | TIN | Tin (Sn) | Tin (Sn) | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 40 | NOT SPECIFIED | - |
Factory Lead Time | - | 1 week | 1 week | 1 week | - |
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