MJW3281A (NPN)
MJW1302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJW3281A and MJW1302A are PowerBase
t
power
transistors for high power audio, disk head positioners and other linear
applications.
Features
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•
Designed for 100 W Audio Frequency
•
Gain Complementary:
•
•
•
•
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
230 VOLTS 200 WATTS
Gain Linearity from 100 mA to 7 A
h
FE
= 45 (Min) @ I
C
= 8 A
Low Harmonic Distortion
High Safe Operation Area
−
1 A/100 V @ 1 Second
High f
T
−
30 MHz Typical
Pb−Free Packages are Available*
1
2
3
TO−247
CASE 340L
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
Collector Current
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
230
230
5.0
230
15
25
1.5
200
1.43
−
65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
1 BASE
3 EMITTER
2 COLLECTOR
xxxx
A
Y
WW
G
= 3281 or 1302
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MJWxxxxA
AYWWG
MARKING DIAGRAM
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
0.625
40
Unit
°C/W
°C/W
ORDERING INFORMATION
Device
MJW3281A
MJW3281AG
MJW1302A
MJW1302AG
Package
TO−247
TO−247
(Pb−Free)
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
30 Units/Rail
30 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
March, 2010
−
Rev. 4
1
Publication Order Number:
MJW3281A/D
MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 230 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 7 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 15 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
f
T
C
ob
−
−
30
−
−
600
MHz
pF
h
FE
50
50
50
50
50
45
12
−
−
125
−
−
−
115
−
35
0.4
−
200
200
200
200
200
−
−
2
2
−
I
S/b
4
1
−
−
−
−
Adc
V
CEO(sus)
I
CBO
I
EBO
230
−
−
−
−
−
−
50
5
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(on)
Vdc
Vdc
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MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
50
f T, CURRENT BANDWIDTH PRODUCT (MHz)
V
CE
= 10 V
40
5V
30
f T, CURRENT BANDWIDTH PRODUCT (MHz)
60
V
CE
= 10 V
50
5V
40
30
20
10
0
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
T
J
= 25°C
f
test
= 1 MHz
NPN MJW3281A
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
PNP MJW1302A
1000
1000
Figure 2. Typical Current Gain
Bandwidth Product
NPN MJW3281A
hFE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25°C
T
J
= 100°C
T
J
= 100°C
100
- 25°C
25°C
100
- 25°C
V
CE
= 20 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
0.1
V
CE
= 20 V
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
PNP MJW1302A
1000
1000
Figure 4. DC Current Gain, V
CE
= 20 V
NPN MJW3281A
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
25°C
T
J
= 100°C
100
T
J
= 100°C
100
25°C
- 25°C
- 25°C
V
CE
= 5 V
V
CE
= 5 V
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
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3
Figure 6. DC Current Gain, V
CE
= 5 V
MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
45
40
IC, COLLECTOR CURRENT (A)
35
30
25
20
15
10
5.0
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
T
J
= 25°C
0.5 A
1A
1.5 A
I
B
= 2 A
IC , COLLECTOR CURRENT (A)
45
1.5 A
40
35
30
25
20
15
10
5.0
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
25
1A
0.5 A
NPN MJW3281A
I
B
= 2 A
Figure 7. Typical Output Characteristics
PNP MJW1302A
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
2.5
Figure 8. Typical Output Characteristics
NPN MJW3281A
2.0
T
J
= 25°C
I
C
/I
B
= 10
1.5
V
BE(sat)
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
V
CE(sat)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJW1302A
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
10
T
J
= 25°C
NPN MJW3281A
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base−Emitter Voltage
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4
Figure 12. Typical Base−Emitter Voltage
MJW3281A (NPN) MJW1302A (PNP)
PNP MJW1302A
100
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
100
NPN MJW3281A
10 mSec
10
100 mSec
1 Sec
1.0
10
1 Sec
1.0
10 mSec
100 mSec
0.1
1.0
10
100
V
CE
, COLLECTOR EMITTER (VOLTS)
1000
0.1
1.0
10
100
V
CE
, COLLECTOR EMITTER (VOLTS)
1000
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on T
J(pk)
= 150°C;
T
C
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW1302A
10000
C
ib
10000
C
ib
NPN MJW3281A
C, CAPACITANCE (pF)
1000
C
ob
C, CAPACITANCE (pF)
1000
C
ob
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
100
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW1302A Typical Capacitance
Figure 16. MJW3281A Typical Capacitance
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