VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 5 A FRED Pt
®
FEATURES
•
•
•
•
•
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263AB (D
2
PAK)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
DESCRIPTION / APPLICATIONS
1
2
3
Anode
2
1
2
3
Anode
2
Anode Common
1 cathode
Anode Common
1 cathode
VS-MURB1020CTPbF
VS-MURB1020CT-1PbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Diode variation
TO-263AB (D
2
PAK), TO-262AA
2x5A
200 V
0.87 V
25 ns
175 °C
Common cathode
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 149 °C
Rated V
R
, T
C
= 149 °C
TEST CONDITIONS
MAX.
200
5
10
50
10
-65 to +175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
I
R
= 100 μA
I
F
= 5 A, T
J
= 25 °C
Forward voltage
V
F
I
F
= 5 A, T
J
= 125 °C
I
F
= 10 A, T
J
= 25 °C
I
F
= 10 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
-
TYP.
-
0.99
0.87
1.12
1.02
-
-
8
8.0
MAX.
-
1.08
0.99
1.25
1.20
10
250
-
-
μA
pF
nH
V
UNITS
Revision: 02-Feb-16
Document Number: 94518
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 5 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
24
35
3.3
5.0
33
76
MAX.
35
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-263AB (D
2
PAK)
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.5
2.0
0.07
-
MAX.
175
5
50
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
MURB1020CT
MURB1020CT-1
Revision: 02-Feb-16
Document Number: 94518
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
100
T
J
= 175 °C
100
I
R
- Reverse Current (μA)
10
T
J
= 150 °C
1
T
J
= 125 °C
0.1
0.01
0.001
0.0001
T
J
= 25 °C
T
J
= 100 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
40
80
120
160
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
1
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
0.1
Single
pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.01
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 02-Feb-16
Document Number: 94518
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
www.vishay.com
180
50
I
F
= 10 A
I
F
= 5 A
170
40
DC
160
Vishay Semiconductors
Allowable Case Temperature (°C)
t
rr
(ns)
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
30
150
140
20
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
6
8
10
100
1000
130
0
2
4
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
7
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
160
140
120
I
F
= 10 A
I
F
= 5 A
Average Power Loss (W)
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
Q
rr
(nC)
RMS limit
100
80
60
40
20
0
100
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Revision: 02-Feb-16
Document Number: 94518
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB1020CTPbF, VS-MURB1020CT-1PbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 02-Feb-16
Document Number: 94518
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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