NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
•
•
•
•
•
Low R
DS(on)
Low Capacitance
Optimized Gate Charge
NVMFS5834NLWF − Wettable Flanks Product
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
t
p
= 10
ms
I
DM
T
J
,
T
STG
I
S
EAS
IAS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
14
12
3.6
2.5
75
63
107
75
276
−55 to
+175
75
48
31
260
A
°C
A
mJ
A
°C
W
A
W
Unit
V
V
A
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V
(BR)DSS
40 V
R
DS(ON)
MAX
9.3 mW @ 10 V
I
D
MAX
75 A
13.6 mW @ 4.5 V
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Bottom) (Note 1)
Junction−to−Case (Top) (Note 1)
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Symbol
R
qJC
R
qJC
R
qJA
R
qJA
Value
1.4
4.5
41
75
°C/W
Unit
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 6
Publication Order Number:
NTMFS5834NL/D
NTMFS5834NL, NVMFS5834NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
34.7
1.0
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±20
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.0
5.7
3.0
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 20 A
I
D
= 20 A
7.1
11.3
29
9.3
13.6
mW
S
Forward Transconductance
g
FS
V
DS
= 5 V, I
D
= 20 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C
T
J
= 125°C
0.84
0.72
18
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 20 A
10
8.0
11
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 20 A, R
G
= 2.5
W
10
56.4
17.4
6.6
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 20 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 20 V
1231
198
141
24
12
1.0
4.2
6.3
3.4
0.7
V
W
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
150
10 V
I
D
, DRAIN CURRENT (A)
125
100
75
50
3.5 V
25
3.0 V
0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
2
3
T
J
= 25°C
5.0 V
4.5 V
I
D
, DRAIN CURRENT (A)
125
100
75
50
25
T
J
= 125°C
T
J
= −55°C
4
5
6
150
V
DS
≥
10 V
4.0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.050
I
D
= 20 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
5
15
25
35
45
55
65
75
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V
V
GS
= 4.5 V
T
J
= 25°C
0.040
0.030
0.020
0.010
0.000
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
100
−25
0
25
50
75
100
125
150
175
V
GS
= 10 V
I
D
= 20 A
I
DSS
, LEAKAGE (nA)
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1,000
T
J
= 125°C
10
20
30
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
1800
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
10
20
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
rss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
6
4
Q
gs
Q
gd
V
DS
= 20 V
I
D
= 20 A
T
J
= 25°C
2
0
0
5
10
15
20
25
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
40
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 32 V
I
D
= 20 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
r
t
d(on)
t
d(off)
10
t
f
V
GS
= 0 V
T
J
= 25°C
30
20
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10
ms
I
D
, DRAIN CURRENT (A)
10
100
ms
1 ms
1
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10 ms
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
50
Figure 10. Diode Forward Voltage vs. Current
40
30
20
0.1
dc
10
0.01
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
1
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NTMFS5834NLT1G
NVMFS5834NLT1G
NVMFS5834NLWFT1G
NVMFS5834NLT3G
NVMFS5834NLWFT3G
Marking
5834L
V5834L
5834LW
V5834L
5834LW
Package
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
DFN5
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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