2N2905A
Small Signal Switching
Transistor
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
•
MIL−PRF−19500/290 Qualified
•
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
, T
stg
Value
−60
−60
−5.0
−600
800
3.0
−65
to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
195
50
Unit
°C/W
°C/W
TO−39
CASE 205AB
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
JAN2N2905A
JANTX2N2905A
JANTXV2N2905A
TO−39
Bulk
Package
Shipping
©
Semiconductor Components Industries, LLC, 2012
August, 2012
−
Rev. 2
1
Publication Order Number:
2N2905A/D
2N2905A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 1)
(I
C
=
−10
mAdc)
Collector−Emitter Cutoff Current
(V
CE
=
−60
Vdc)
Collector−Base Cutoff Current
(V
CB
=
−50
Vdc)
(V
CB
=
−60
Vdc)
Emitter−Base Cutoff Current
(V
EB
=
−5.0
Vdc)
(V
EB
=
−3.5
Vdc)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
=
−0.1
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−150
mAdc, V
CE
=
−10
Vdc)
(I
C
=
−500
mAdc, V
CE
=
−10
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−150
mAdc, I
B
=
−15
mAdc)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
=
−150
mAdc, I
B
=
−15
mAdc)
(I
C
=
−500
mAdc, I
B
=
−50
mAdc)
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small Signal Current Gain
(I
C
=
−50
mAdc, V
CE
=
−20
Vdc, f = 100 MHz)
Small Signal Current Gain
(I
C
=
−1.0
mAdc, V
CE
=
−10
Vdc, f = 1 kHz)
Output Capacitance (V
CB
=
−10
Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz)
Input Capacitance (V
EB
=
−2.0
Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/290)
Turn−Off Time
(Reference Figure in MIL−PRF−19500/290)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
t
on
t
off
−
−
45
300
ns
ns
|h
fe
|
h
fe
C
obo
C
ibo
2.0
100
−
−
−
−
8.0
30
−
−
pF
pF
h
FE
75
100
100
100
50
−
−
−
−
−
450
−
300
−
−0.4
−1.6
−1.3
−2.6
−
V
(BR)CEO
I
CES
I
CBO
−60
−
−
−
−
−
−
−1.0
−10
−10
−10
−50
Vdc
mAdc
Symbol
Min
Max
Unit
nAdc
mAdc
mAdc
nAdc
I
EBO
V
CE(sat)
Vdc
V
BE(sat)
Vdc
http://onsemi.com
2
2N2905A
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB
ISSUE A
B
DETAIL X
A
B
P
L
C
A
K
E
NOTE 7
SEATING
PLANE
U
U
R
NOTE 5
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
---
45
_
BSC
5.08 BSC
---
1.27
1.37 BSC
---
0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
---
45
_
BSC
0.200 BSC
---
0.050
0.054 BSC
---
0.030
0.100
---
T
D
NOTES 4 & 6
0.007 (0.18MM) A B
S
C
3X
DETAIL X
M
H
M
C
J
N
2
1
3
LEAD IDENTIFICATION
DETAIL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor
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3
2N2905A/D
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