PD - 96104A
IRF7304QPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
= -20V
R
DS(on)
= 0.090Ω
6
5
Description
These HEXFET
®
Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
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1
08/02/10
IRF7304QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20
V
V
GS
= 0V, ID = -250µA
-0.012 V/°C Reference to 25°C, I
D
= -1mA
0.090
V
GS
= -4.5V, I
D
= -2.2A
Ω
0.140
V
GS
= -2.7V, I
D
= -1.8A
-0.70
V
V
DS
= V
GS
, I
D
= -250µA
4.0
S
V
DS
= -16V, I
D
= -2.2A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
22
I
D
= -2.2A
3.3
nC V
DS
= -16V
9.0
V
GS
= -4.5V, See Fig. 6 and 12
8.4
V
DD
= -10V
26
I
D
= -2.2A
ns
51
R
G
= 6.0Ω
33
R
D
= 4.5Ω, See Fig. 10
4.0
6.0
610
310
170
nH
pF
D
Between lead tip
and center of die contact
V
GS
= 0V
V
DS
= -15V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
56
71
-2.5
A
-17
-1.0
84
110
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.2A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
-2.2A, di/dt
≤−
50A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
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2
IRF7304QPbF
100
-I D , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
1
1
-1.5V
-1.5V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
100
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T
J
= 150°C
0.1
1
10
100
A
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -3.6A
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
T
J
= 150°C
1.5
1.0
1
0.5
0.1
1.5
2.0
2.5
3.0
V
DS
= -15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -4.5V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7304QPbF
1500
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -2.2A
V
DS
= -16V
8
C, Capacitance (pF)
C
iss
1000
C
oss
C
rss
500
6
4
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 12
15
20
25
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150°C
T
J
= 25°C
-I
D
, Drain Current (A)
I
10
1ms
1
0.1
0.3
0.6
0.9
1.2
V
GS
= 0V
A
1.5
1
T
A
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
10ms
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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4
IRF7304QPbF
V
DS
5.0
R
D
V
GS
R
G
D.U.T.
+
4.0
-I
D
, Drain Current (A)
-4.5 V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
3.0
Fig 10a.
Switching Time Test Circuit
2.0
V
DS
90%
1.0
0.0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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