Si4955DY
New Product
Vishay Siliconix
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
PRODUCT SUMMARY
V
DS
(V)
Channel-1
- 30
r
DS(on)
(Ω)
0.054 at V
GS
= - 10 V
0.100 at V
GS
= - 4.5 V
0.027 at V
GS
= - 4.5 V
Channel-2
- 20
0.035 at V
GS
= - 2.5 V
0.048 at V
GS
= - 1.8 V
I
D
(A)
- 5.0
- 3.7
- 7.0
- 6.2
- 5.2
FEATURES
• TrenchFET
®
Power MOSFETs
• Low Gate Drive (2.5 V) Capability For
Channel 2
RoHS
COMPLIANT
APPLICATIONS
• Game Station
- Load Switch
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information:
Si4955DY-T1-E3 (Lead (Pb)-free)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 0.9
1.1
0.7
- 55 to 150
- 5.0
- 4.0
Channel-1
10 sec
Steady State
- 30
± 20
- 3.8
- 3.0
- 20
- 1.7
2
1.3
- 0.9
1.1
0.7
W
°C
- 7.0
- 5.6
Channel-2
10 sec
Steady State
- 20
±8
- 5.3
- 4.2
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
1
t
≤
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Channel-1
Typ
55
90
33
Max
62.5
110
40
58
91
34
Channel-2
Typ
Max
62.5
110
40
°C/W
Unit
Si4955DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
≥
- 5 V, V
GS
= - 10 V
V
DS
≤
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 5.0 A
V
GS
= - 4.5 V, I
D
= - 7.0 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 4.5 V, I
D
= - 3.7 A
V
GS
= - 2.5 V, I
D
= - 6.2 A
V
GS
= - 1.8 V, I
D
= - 3 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Channel-2
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 7 A
Ch-1
Channel-1
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5.0 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= - 15 V, R
L
= - 15
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
G
= 6
Ω
Channel-2
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
G
= 6
Ω
I
F
= - 1.7 A, di/dt = 100 A/µs
I
F
= - 1.7 A, di/dt = 100 A/µs
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
12.5
21
2.1
2.6
3.5
6.0
7
20
10
40
30
125
22
85
25
64
15
30
15
60
45
190
35
130
60
90
ns
19
25
nC
g
fs
V
SD
V
DS
= - 15 V, I
D
= - 5.0 A
V
DS
= - 15 V, I
D
= - 3 A
I
S
= - 1.7 A, V
GS
= 0 V
I
S
= - 1.7 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
- 20
- 20
0.044
0.022
0.082
0.029
0.039
10
25
- 0.80
- 0.80
- 1.2
- 1.2
0.054
0.027
0.100
0.035
0.048
S
V
Ω
- 1.0
- 0.4
-3
-1
± 100
± 100
-1
-1
-5
-5
A
µA
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS
20
V
GS
= 10 thru 5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
25 °C unless noted
20
12
4V
8
12
8
4
3V
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
4
T
C
= 125
°C
25
°C
- 55
°C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.20
1000
Transfer Characteristics
r
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.16
800
C
iss
600
0.12
V
GS
= 4.5 V
0.08
V
GS
= 10 V
0.04
400
C
oss
200
C
rss
0.00
0
4
8
12
16
20
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 5.0 V
8
1.6
V
GS
= 10 V
I
D
= 5.0 V
1.4
Capacitance
6
r
DS(on)
- On-Resistance
(Normalized)
4
6
8
10
12
14
1.2
4
1.0
2
0.8
0
0
2
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
3
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS
25 °C unless noted
30
T
J
= 150
°C
r
DS(on)
- On-Resistance (Ω)
0.16
I
D
= 2 A
0.12
I
D
= 5 A
I
S
- Source Current (A)
0.20
10
0.08
T
J
= 25
°C
0.04
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
30
On-Resistance vs. Gate-to-Source Voltage
0.4
V
GS(th)
Variance (V)
I
D
= 250
µA
0.2
Power (W)
25
20
15
0.0
10
- 0.2
5
- 0.4
- 50
0
10-
3
- 25
0
25
50
75
100
125
150
10-
2
10-
1
1
10
100
600
T
J
- Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power
100
I
DM
Limited
r
DS(on)
Limited
P(t) = 0.0001
I D - Drain Current (A)
10
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
T
A
= 25 °C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
P(t) = 1
P(t) = 10
dc
Safe Operating Area
www.vishay.com
4
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
Si4955DY
Vishay Siliconix
CHANNEL 1 TYPICAL CHARACTERISTICS
25 °C unless noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90
°C/W
t
1
t
2
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (sec)
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
5
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