HCC/HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
.
.
.
.
.
.
32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY
– 136mA TYP. @ V
DD
= 10V, V
DS
= 1V
QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
F
(Plastic Package) (Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES
HCC40107BF
HCF40107BM1
HCF40107BEY HCF40107BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC40107B
(extended temperature range)
and
HCF40107B
(intermediate temperature range)
are monolithic integrated circuits, available in 14-
lead dual in-line ceramic package 8-lead minidip
plastic package and 8-lead plastic micropackage.
The
HCC/HCF40107B
is a dual 2-input NAND buf-
fer/driver containing two independent 2-input NAND
buffers with open-drain single n-channel transistor
outputs. This device features a wired-OR capability
and high output sink current capability (136mA typ.
at V
DD
= 10V, V
DS
= 1V).
September 1988
1/14
HCC/HCF40107B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
tot
Parameter
Supply Voltage :
HCC
types
HCF
types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
op
= full package-temperature Range
Operating Temperature :
HCC
types
HCF
types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to VDD + 0.5
±
10
200
mW
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
°C
°C
Unit
V
V
mA
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
H CC
Types
H C F
Types
Input Voltage
Operating Temperature :
HCC
Types
H CF
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
2/14
HCC/HCF40107B
SCHEMATIC DIAGRAM AND TRUTH TABLE
A
0
1
0
1
B
0
0
1
1
1*
1*
1*
0
C
Z
#
Z
#
Z
#
* Requires external and pull-up resis-
tor (R
L
) to V
DD
.
# Without pull-up resistor (3-state).
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
IH
**
Input High
Voltage
0.5/4.5
1/9
4.5
9
13.5
*
*
Value
Unit
V
O
(V)
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi g h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
<1
<1
<1
<1
<1
5
10
15
5
10
15
3.5
7
11
1.5
3
4
1
2
4
20
4
8
16
3.5
7
11
1.5
3
4
0.02
0.02
0.02
0.04
0.02
0.02
0.02
1
2
4
20
4
8
16
3.5
7
11
1.5
3
4
30
60
120
600
30
60
120
I
L
Quiescent
Current
µA
V
1.5/13.5 < 1
V
IL
**
Input Low
Voltage
V
T
Low
= – 55°C for HCC device ; – 40°C for HCF device.
T
High
= + 125°C for HCC device ; + 85°C for HCF device.
The Noise Margin, full package temperature range, R
L
to V
DD
= 10kΩ : 1V min with V
DD
= 5V, 2V min with V
DD
= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R
L
= 10kΩ to V
DD
.
*** Forced output disabled.
3/14
HCC/HCF40107B
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
Parameter
V
I
(V)
5
HCC
Types
5
10
10
15
5
HCF
Types
5
10
10
15
I
OH
I
IH
, I
IL
Output Drive
Current
Input
Leakage
Current
3-State
Output
Leakage
Current
HCC
0/18
Types
HCF
0/15
Types
HCC
0/18
Types
HCF
0/15
Types
V
O
(V)
0.4
1
0.5
1
0.5
0.4
1
0.5
1
0.5
Value
Unit
|I
O
| V
D D
T
L o w
*
2 5
°C
T
Hig h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
5
10
10
15
5
5
10
10
15
21
44
49
89
66
17
35.7
39.1
72.2
53.5
16
30
37
68
50
13.6
25.5
31.4
57.8
42.5
32
68
74
136
100
32
68
74
136
100
12
25
28
51
38
12
22
27
51
37
mA
±
1
±
1
20
µA
2
7.5
20
pF
pF
mA
I
OL
Output
Sink
Current
No Internal Pull-up Device
18
Any Input
15
18
15
Any Input
Any Output
18
15
±
0.1
±
0.3
2
2
±10
– 5
±
0.1
±10
–5
µA
±
0.3
2
I
OH
,I
OL
***
±10
– 4
±10
– 4
5
30
C
I
C
O
*
*
Input Capacitance
Output
Capacitance
T
Low
= – 55°C for HCC device ; – 40°C for HCF device.
T
High
= + 125°C for HCC device ; + 85°C for HCF device.
The Noise Margin, full package temperature range, R
L
to V
DD
= 10kΩ : 1V min with V
DD
= 5V, 2V min with V
DD
= 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R
L
= 10kΩ to V
DD
.
*** Forced output disabled.
4/14
HCC/HCF40107B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, typical temperature
coefficient for all V
DD
values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
t
P HL
,
t
PL H
Parameter
Propagation Delay Time
High to Low
Test Conditions
V
D D
(V)
Min.
R
L
* = 120Ω
5
10
15
Low to High
R
L
* = 120Ω
5
10
15
t
THL
,
t
TL H
Transition Time
High to Low
R
L
* = 120Ω
5
10
15
Low to High
R
L
* = 120Ω
5
10
15
* R
L
is external pull-up resistor to V
DD
.
Value
Typ.
100
45
30
100
60
50
50
20
10
50
35
25
Max.
200
90
60
200
120
100
100
40
20
100
70
50
Unit
ns
ns
ns
ns
Output Low (sink) Current Characteristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
5/14
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