nor function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buf-
fered.
.
.
.
.
.
.
.
.
PROPAGATION DELAY TIME = 60 ns (typ.) AT
C
L
= 50 pF, V
DD
= 10 V
BUFFERED INPUTS AND OUTPUTS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED TO 20 V
FOR HCC DEVICE
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25
o
C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N. 13A, ” STANDARD
SPECIFICATIONS FOR DESCRIPTION OF B
SERIES CMOS DEVICES ”
EY
(Plastic Package)
F
(Ceramic Package)
DESCRIPTION
The
HCC4000B, HCC4001B, HCC4002B
and
HCC4025B
(extended temperature range) and
HCF4000B,
HCF4001B,
HCF4002B
and
HCF4025B
(intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in line plastic or ceramic package and plastic
PIN CONNECTIONS
4000B
4001B
4002B
4025B
M1
(Micro Package)
C1
(Chip Carrier)
ORDER CODES :
HCCXXXXBF
HCFXXXXBM1
HCFXXXXBEY
HCFXXXXBC1
September 1988
1/13
HCC/HCF4000B-4001B-4002B-4025B
ABSOLUTE MAXIMUM RATING
Symbol
V
DD
*
V
i
I
I
P
tot
Parameter
Supply Voltage:
HCC
Types
HCF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
Operating Temperature:
HCC
Types
HCF
Types
Storage Temperature
Value
-0.5 to +20
-0.5 to +18
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-40 to +85
-65 to +150
Unit
V
V
V
mA
mW
mW
o
o
o
T
op
T
stg
C
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage:
HCC
Types
HCF
Types
Input Voltage
Operating Temperature:
HCC
Types
HCF
Types
Value
3 to 18
3 to 15
0 to V
DD
-55 to +125
-40 to +85
Unit
V
V
V
o
o
C
C
2/13
HCC/ HCF4000B-4001B-4002B-4025B
SCHEMATIC AND LOGIC DIAGRAMS
4000B
INVERTERAND 1 OF 2 GATES (NUMBERS IN PARANTHESES ARE
THERMINAL FOR SECOND GATE)
4001B
1 OF 4 GATES (NUMBERS IN PARANTHESES ARE THERMINAL FOR
OTHER GATE)
3/13
HCC/HCF4000B-4001B-4002B-4025B
SCHEMATIC AND LOGIC DIAGRAMS
(continued)
4002B
1 OF2 GATES (NUMBERS IN PARANTHESES ARE THERMINAL FOR SEC-
OND GATE)
4025B
INVERTERAND 1 OF 3 GATES (NUMBERS IN PARANTHESES ARE
THERMINAL FOR OTHER GATES)
4/13
HCC/ HCF4000B-4001B-4002B-4025B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Symbol
I
L
Parameter
Quiescent
Current
Test Conditios
V
I
V
O
|I
O
| V
DD
(V)
(V)
(µA) (V)
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
0/15
Any Input
15
±0.3
±10
5
-5
V
OH
V
OL
V
IH
0/5
0/10
0/15
0/20
0/5
HCF
Types 0/10
0/15
Output High
0/5
Voltage
0/10
0/15
Output Low
5/0
Voltage
10/0
15/0
Input High
Voltage
HCC
Types
Input Low
Voltage
Output
Drive
Current
0/5
0/5
0/10
0/15
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/5
0/10
0/15
0/18
V
IL
I
OH
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
<
<
<
<
<
<
<
<
<
<
<
<
1
1
1
1
1
1
1
1
1
1
1
1
T
LOW
*
Min. Max.
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-2
-0.64
-1.6
-4.2
-1.53
-0.52
-1.3
-3.6
0.64
1.6
4.2
0.52
1.3
3.6
±0.1
Value
25
o
C
Min. Typ. Max.
0.01 0.25
0.01 0.5
0.01
1
0.02
5
0.01
1
0.01
2
0.01
4
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.6 -3.2
-0.51 -1
-1.3 -2.6
-3.4 -6.8
-1.36 -3.2
-0.44 -1
-1.1 -2.6
-3.0 -6.8
0.51
1
1.3
2.6
3.4
6.8
0.44
1
1.1
2.6
3.0
6.8
±10
-5
±0.1
±0.3
7.5
T
HIGH
*
Min. Max.
7.5
15
30
150
7.5
15
30
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.15
-0.36
-0.9
-2.4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
0.36
0.9
2.4
±1
±1
Unit
µA
V
V
V
V
mA
mA
I
IH
, I
IL
Input
Leakage
Current
Input
Capacitance
HCC
Types
HCF
Types
µA
C
I
pF
* T
LOW
= -55
o
C for
HCC
device: -40
o
C for
HCF
device.
* T
HIGH
= +125
o
C for
HCC
device: +85
o
C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is: 1V min. with V
嵌入式系统
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