HCC4073B/81B/82B
HCF4073B/81B/82B
AND GATES
4073B TRIPLE
4081B QUAD
3–INPUT AND GATE
2–INPUT AND GATE
4–INPUT AND GATE
.
.
.
.
.
.
4082B DUAL
MEDIUM SPEED OPERATION – t
PLH
= 85ns
(typ.) ; t
PHL
= 65ns (typ.) AT 10V
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND
25°C FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
DESCRIPTION
The
HCC4073B, HCC4081B
and
HCC4082B
(ex-
tended temperature range) and the
HCF4073B,
HCF4081B
and
HCF4082B
(intermediate tempera-
ture range) are monolithic integrated circuits avail-
able in 14-lead dual in-line plastic or ceramic pack-
age and plastic micro package.
The
HCC/HCF4073B, 4081B
and
4082B
AND
gates provide the system designer with direct im-
CONNECTION DIAGRAM
4073B
4081B
4082B
June 1989
1/10
HCC/HCF4073B/4081B/4082B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
t ot
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H CF
Types
Input Voltage
Operating Temperature :
HCC
Types
H CF
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
OH
Output High
Voltage
0/ 5
0/10
0/15
V
OL
Output Low
Voltage
5/0
10/0
15/0
*
*
Value
Unit
V
O
(V)
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi gh
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
<1
<1
<1
<1
<1
<1
5
10
15
5
10
15
4.95
9.95
14.95
0.05
0.05
0.05
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
7.5
15
30
150
7.5
15
30
I
L
Quiescent
Current
µA
V
V
T
Low
= – 55°C for
HCC
device : – 40°C for
HCF
device.
T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
2/10
HCC/HCF4073B/4081B/4082B
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
Parameter
V
I
(V)
V
O
(V)
0.5/4.5
1/9
4.5/0.5
9/1
0/ 5
HCC 0/ 5
Types 0/10
0/15
0/ 5
0/ 5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/ 5
HCC
0/10
Types
0/15
0/ 5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
Leakage
Current
HCC
0/18
Types
HCF
Types 0/15
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi gh
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
<1
<1
<1
<1
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
±
0.3
±10
– 5
±
0.3
5
7.5
±
1
pF
– 2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
±10
– 5
±
0.1
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
µA
mA
mA
3.5
7
11
1.5
3
4
V
V
V
IH
Input High
Voltage
1.5/13.5 < 1
V
IL
Input Low
Voltage
13.5/1.5 < 1
I
OH
Output
Drive
Current
C
I
*
*
Input Capacitance
T
Low
= – 55°C for
HCC
device : – 40°C for
HCF
device.
T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, typical temperature
coefficient for all V
D D
values is 0.3%/°C, all input rise and fall times = 20ns, R
L
= 200kΩ)
Symbol
Parameter
Test Conditions
V
D D
(V)
Min.
5
10
15
t
T L H
, t
THL
Transition Time
5
10
15
Value
Typ.
125
60
45
100
50
40
Max.
250
125
90
200
100
80
ns
ns
Unit
t
PHL
, t
PL H
Propagation Delay Time
3/10
HCC/HCF4073B/4081B/4082B
Typical Voltage and Current Transfer Charac-
teristics.
Typical Output Low (sink) Current .
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
4/10
HCC/HCF4073B/4081B/4082B
Typical Transition Time vs. Load Capacitance.
Typical Dynamic Power Dissipation per Gate vs.
Frequency.
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
5/10
微控制器 MCU
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