HCC/HCF4068B
8-INPUT NAND/AND GATE
.
.
.
.
.
.
.
MEDIUM-SPEED OPERATION – t
PHL
, t
PLH
=
75ns (typ.) AT 10V
BUFFERED OUTPUT
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4068BF
HCF4068BM1
HCF4068BEY
HCF4068BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4068B
(extended temperature range) and
HCF4068B
(intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package. The
HCC/HCF4068B
NAND/AND
gate provides the system designer with direct im-
plementation of the positive-logic 8-input NAND and
AND functions and supplements the existing family
of COS/MOS gates.
June 1989
1/10
HCC/HCF4068B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
t ot
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
Operating Temperature :
H CC
Types
H C F
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to 125
– 40 to 85
Unit
V
V
V
°C
°C
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
OH
Output High
Voltage
0/ 5
0/10
0/15
V
OL
Output Low
Voltage
5/0
10/0
15/0
V
IH
Input High
Voltage
0.5/4.5
1/9
<1
<1
<1
<1
<1
<1
<1
<1
V
O
(V)
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi g h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
3.5
7
11
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
V
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
V
V
7.5
15
30
150
7.5
15
30
µA
I
L
Quiescent
Current
1.5/13.5 < 1
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
2/10
HCC/HCF4068B
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
Parameter
V
I
(V)
V
O
(V)
4.5/0.5
9/1
0/ 5
HCC 0/ 5
Types 0/10
0/15
0/ 5
0/ 5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/ 5
HCC
0/10
Types
0/15
0/ 5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
leakage
Curent
HCC
Types 0/18
HCF
Types 0/15
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi g h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
<1
<1
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
±
0.3
±10
5
–5
V
IL
Input Low
Voltage
1.5
3
4
– 2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
1.5
3
4
V
13.5/1.5 < 1
I
OH
Output
Drive
Current
mA
mA
±10
– 5
±
0.1
±
0.3
7.5
±
1
µA
±
1
pF
C
I
Input Capacitance
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200kΩ,
typical temperature coefficient for all V
DD
values is 0.3%/°C, all input rise and fall times = 20ns)
Test Conditions
Symbol
t
PHL
, t
PL H
Parameter
Propagation Delay Time
V
D D
(V)
Min.
5
10
15
t
T L H
, t
THL
Transition Time
5
10
15
Value
Typ.
150
75
55
100
50
40
Max.
300
150
110
200
100
80
ns
ns
Unit
3/10
HCC/HCF4068B
Typical Voltage and Current Transfer Charac-
teristics.
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typi
Minimum Output-p-channel Drain Characteristics.
Typical Transition Time vs. C
L
.
4/10
HCC/HCF4068B
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Typical Dynamic Power Dissipation vs. Fre-
quency.
Input Current.
5/10
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