HCC/HCF4043B
HCC/HCF4044B
QUAD 3-STATE R-S LATCHES
QUAD NOR
QUAD NAND
.
.
.
.
.
.
.
.
R-S LATCH-4043B
R-S LATCH-4044B
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
3-LEVEL OUTPUTS WITH COMMON OUTPUT
ENABLE
SEPARATE SET AND RESET INPUT FOR
EACH LATCH
5V, 10V, AND 15V PARAMETRIC RATINGS
NOR AND NAND CONFIGURATIONS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N° 13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
PIN CONNECTIONS
4043B
DESCRIPTION
The
HCC4043B, HCC4044B,
(extended tempera-
ture range) and the
HCF4043B, HCF4044B
(inter-
mediate temperature range) are monolithic
integrated circuits, available in 16-lead dual in-line
plastic or ceramic package and plastic micropack-
age. The
HCC/HCF4043B
types are quad cross-
coupled 3-state COS/MOS NOR latches and the
HCC/HCF4044B
types are quad cross-coupled 3-
state COS/MOS NAND latches. Each latch has a
separate Q output and individual SET and RESET
inputs. The Q outputs are controlled by a common
ENABLE input. A logic ”1” or ”high” on the ENABLE
input connects the latch states to the Q outputs. A
logic ”0” or ”low” on the ENABLE input disconnects
the latch states from the Q outputs, resulting in an
open circuit condition on the Q outputs. The open
circuit feature allows common bussing of the out-
puts.
June 1989
4044B
1/13
HCC/HCF4043B/4044B
FUNCTIONAL DIAGRAMS
4043B
4044B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
t ot
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliabili ty.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
Operating Temperature :
H CC
Types
H C F
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
2/13
HCC/HCF4043B/4044B
STATIC ELECTRICAL CHARACTERISTICS
(continued)
Symbol
V
IL
Parameter
Input Low
Voltage
Output
Drive
Current
Test Conditions
V
O
|I
O
| V
D D
T
L o w
*
V
I
(V)
(V)
(µA) (V)
Min. Max.
4.5/0.5 < 1
5
1.5
9/1
<1
10
3
13.5/1.5 < 1
15
4
0/ 5
2.5
5
– 2
0/ 5
4.6
5 – 0.64
0/10
9.5
10 – 1.6
0/15
13.5
15 – 4.2
0/ 5
2.5
5 – 1.53
0/ 5
4.6
5 – 0.52
0/10
9.5
10 – 1.3
0/15
13.5
15 – 3.6
0/ 5
0.4
5
0.64
0/10
0.5
10
1.6
0/15
1.5
15
4.2
0/ 5
0.4
5
0.52
0/10
0.5
10
1.3
0/15
1.5
15
3.6
0/18
Any Input
0/15
0/18
0/15
0/18
0/15
Any Input
15
18
15
±
0.3
±
0.4
±
1.0
±10
–5
I
OH
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
Value
25
°C
Min. Typ. Max.
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1
1.3
2.6
3.4
6.8
0.44
1
1.1
2.6
3.0
6.8
±10
– 5
±
0.1
±
0.3
T
Hi g h
*
Min. Max.
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
±
1
±
12
±
7.5
Unit
V
mA
mA
I
IH
, I
IL
I
OH
C
I
HCC
Types
HCF
Types
3-state
HCC
Output
Types
HCF
Types
Input Capacitance
Input
leakage
Current
18
±
0.1
µA
±10
– 4
±
0.4
±10
– 4
±
1.0
5
7.5
µA
pF
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V min. with V
DD
= 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200kΩ,
typical temperature coefficient for all V
DD
values is 0.3%/°C, all input rise and fall times = 20ns)
Test Conditions
Symbol
t
PL H
, t
PHL
Parameter
Propagation Delay Time
(SET or RESET to Q)
V
D D
(V)
Min.
5
10
15
t
PZH
, t
PHZ
3-state Propagation Delay Time
(ENABLE to Q)
5
10
15
Value
Typ.
150
70
50
115
55
40
Max.
300
140
100
230
110
80
ns
ns
Unit
4/13
HCC/HCF4043B/4044B
DYNAMIC ELECTRICAL CHARACTERISTICS
(continued)
Test Conditions
Symbol
t
PL Z
, t
PZL
Parameter
Propagation Delay Time
V
D D
(V)
Min.
5
10
15
t
T L H
, t
THL
Transition Time
5
10
15
t
W
Pulse Width (SET or RESET)
5
10
15
160
80
40
Value
Typ.
90
50
35
100
50
40
80
40
20
ns
Max.
180
100
70
200
100
80
ns
ns
Unit
Typical Output Low (sink) Current.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
5/13
测试/测量
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