HCC4011B/12B/23B
HCF4011B/12B/23B
NAND GATES
QUAD 2 INPUT HCC/HCF 4011B
DUAL 4 INPUT HCC/HCF 4012B
TRIPLE 3 INPUT HCC/HCF 4023B
.
.
.
.
.
.
.
PROPAGATION DELAY TIME = 60ns (typ.) AT
C
L
= 50pF, V
DD
= 10V
BUFFERED INPUTS AND OUTPUTS
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
5V, 10V AND 15V PARAMETRIC RATINGS
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
o
. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
DESCRIPTION
The
HCC4011B, HCC4012B
and
HCC4023B
(ex-
tended temperature range) and
HCF4011B,
HCF4012B
and
HCF4023B
(intermediate tempera-
ture range) are monolithic, integrated circuit, avail-
able in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
PIN CONNECTIONS
4011B
The
HCC/HCF4011B, HCC/HCF4012B
and
HCC/HCF4023B
NAND gates provide the system
designer with direct implementation of the NAND
function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buf-
fered.
4012B
4023B
June 1989
1/12
HCC/HFC4011B/12B/23B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
to t
Parameter
Supply Voltage :
HC C
Types
H CF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permane damage to the device. This is a stress rating only and
nt
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
Operating Temperature :
HC C
Types
H C F
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
2/12
HCC/HFC4011B/12B/23B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
OH
Output High
Voltage
0/5
0/10
0/15
V
OL
Output Low
Voltage
5/0
10/0
15/0
V
IH
Input High
Voltage
0.5/4.5
1/9
4.5/0.5
9/1
0/5
0/5
HCC
Types 0/10
0/15
0/5
0/5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/5
HCC
0/10
Types
0/15
0/5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
Leakage
Current
HCC 0/18
Types
HCF
0/15
Types
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
O
(V)
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
Hi g h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
– 2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
±
0.3
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
±10
– 5
±
0.1
±10
– 5
±
0.3
5
7.5
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
±
1
µA
mA
mA
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
V
V
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
V
V
7.5
15
30
150
7.5
15
30
µA
I
L
Quiescent
Current
1.5/13.5 < 1
V
IL
Input Low
Voltage
13.5/1.5 < 1
I
OH
Output
Drive
Current
C
I
Input Capacitance
pF
* T
LOW
= – 55°Cfor
HCC
device : – 40°C for
HCF
device.
* T
HIGH
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5V with V
DD
= 15V.
4/12
HCC/HCF4011B/12B/23B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200kΩ,
typical temperature coefficient for all V
D D
values is 0.3%/°C, all input rise and fall times = 20ns)
Symbol
Parameter
Test Conditions
V
D D
(V)
Min.
5
10
15
t
THL
, t
T L H
Transition Time
5
10
15
Value
Typ.
125
60
45
100
50
40
Max.
250
120
90
200
100
80
ns
ns
Unit
t
PL H
, t
P HL
Propagation Delay Time
TEST CIRCUITS
Quiescent Device Current.
Noise Immunity.
Input Leakage Current.
5/12
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