HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
TO-126ML
Features
•
High Breakdown Voltage
•
Low C-E Saturation Voltage
•
High Cutoff Frequency
•
High Current Gain
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current ................................................................................................................ 20 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
550
550
7
-
-
-
100
90
Typ.
-
-
-
-
-
0.35
150
-
Max.
-
-
-
1
100
0.5
200
-
Unit
V
V
V
uA
nA
V
MHz
Test Conditions
IC=1mA
IC=100uA
IE=10uA,
VCB=500V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=30mA
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBF4522D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
100000
V
CE(sat)
@ I
C
=10I
B
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 2/3
Saturation Voltage & Collector Current
Saturation Voltage (mV)
125 C
o
75 C
o
10000
75 C
1000
125 C
100
o
o
hFE
100
25 C
o
25 C
hFE @ V
CE
=20V
10
1
10
100
10
1
10
100
o
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
25 C
o
Capacitance & Reverse-Biased Voltage
10
Saturation Voltage (mV)
Capacitance (pf)
Cob
125 C
o
75 C
o
V
BE(s at)
@ I
C
=10I
B
100
1
10
100
1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
10
Safe Operating Area
PT=1ms
PT=100ms
Cutoff Frequency (MHz)
..
.
Collector Current-I
C
(A)
1
PT=1s
0.1
fT @ V
CE
=10V
0.01
100
1
10
100
0.001
1
10
100
1000
Collector Current-I
C
(mA)
Forward Biased Voltage (V)
HBF4522D
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126ML Dimension
Marking:
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 3/3
A
H
B F
B
D
E
F
3
O
H
Date Code
4 5 2 2 D
Control Code
C
Style: Pin 1.Emitter 2.Collector 3.Base
2
I
G
1
J
M
L
K
N
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
*: Typical
DIM
A
B
C
D
E
F
G
H
Inches
Min.
Max.
0.1356
0.1457
0.0170
0.0272
0.0344
0.0444
0.0501
0.0601
0.1131
0.1231
0.0737
0.0837
0.0294
0.0494
0.0462
0.0562
Millimeters
Min.
Max.
3.44
3.70
0.43
0.69
0.87
1.12
1.27
1.52
2.87
3.12
1.87
2.12
0.74
1.25
1.17
1.42
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
-
*0.1795
0.0268
0.0331
0.5512
0.5906
0.2903
0.3003
0.1378
0.1478
0.1525
0.1625
0.0740
0.0842
Millimeters
Min.
Max.
-
*4.56
0.68
0.84
14.00
15.00
7.37
7.62
3.50
3.75
3.87
4.12
1.88
2.14
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1 :
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBF4522D
HSMC Product Specification
单片机
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