PD - 94047
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ597130 100K Rads (Si)
IRHNJ593130 300K Rads (Si)
IRHNJ594130 600K Rads (Si)
R
DS(on)
I
D
0.205Ω -12.5A
0.205Ω -12.5A
0.205Ω -12.5A
IRHNJ597130
100V, P-CHANNEL
4
#
TECHNOLOGY
c
IRHNJ598130 1000K Rads (Si) 0.205Ω -12.5A
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
300 ( for 5s )
1.0 ( Typical )
-12.5
-8.0
-50
75
0.6
±20
96
-12.5
7.5
6.2
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
For footnotes refer to the last page
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1
12/07/00
IRHNJ597130
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
0.12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.205
-4.0
—
-10
-25
-100
100
45
16
11
28
78
35
125
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -8.0A
➃
VDS = VGS, ID = -1.0mA
VDS =-25V, IDS = -8.0A
➃
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -12.5A
VDS = -50V
VDD = -50V, ID = -12.5A,
VGS =-12V, RG = 7.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV
DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
6.8
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1372
326
20
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-12.5
-50
-5.0
191
778
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -12.5A, VGS = 0V
➃
Tj = 25°C, IF =-12.5A, di/dt
≥
-100A/µs
VDD
≤
-50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max Units
—
—
—
6.9
1.67
—
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ597130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (SMD-.5)
Diode Forward Voltage
➃
Up to 100K Rads(Si)
1
300K-1000KRads(Si)
2
Units
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
V
GS
= -12V, I
D
=-8.0A
V
GS
= -12V, I
D
=-8.0A
V
GS
= 0V, IS = -12.5A
Min
-100
-2.0
—
—
—
—
—
—
Max
—
-4.0
-100
100
-10
0.205
0.205
-5.0
Min
-100
-2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-10
0.205
0.205
-5.0
V
nA
µA
Ω
Ω
V
1. Part number IRHNJ597130
2. Part numbers IRHNJ593130, IRHNJ594130 and IRHNJ598130
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.9
59.7
82.3
Energy
(MeV)
252.6
314
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V @V
GS
=15V @V
GS
=17.5V @V
GS
=20V
33.1
-100
-100
-100
-100
-100
-100
30.5
-100
-100
-100
-100
-75
-25
28.4
-100
-100
-100
-30
—
—
-120
-100
-80
VDS
-60
Br
I
-40
Au
-20
0
0
5
10
15
20
25
VGS
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ597130
Pre-Irradiation
100
10
-I
D
, Drain-to-Source Current (A)
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
-5.0V
-5.0V
1
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
1
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
I
D
= -12.5A
2.0
T
J
= 150
°
C
10
1.5
1.0
0.5
1
5
6
7
8
15
V DS = -25V
20µs PULSE WIDTH
9
10
11
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ597130
2000
1600
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
1200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -12.5A
16
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
12
800
C
oss
8
400
4
C
rss
0
1
10
100
0
0
10
FOR TEST CIRCUIT
SEE FIGURE 13
30
20
40
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
-I D, Drain-to-Source Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
T
J
= 150
°
C
T
J
= 25
°
C
10
1
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
10ms
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
-V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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