Resistance to sulphur-bearing gas (AS version only): ASTM-B-809
Voltage proof
Volts
Note: A 0.01 Ohm addition to be added to the performance of all resistors <10 Ohms.
ΔR%
ΔR%
ΔR%
ΔR%
ΔR%
1
1
1
0.25
0.25
0.25
500
ΔR%
ΔR%
Maximum
1
0.1
Zero at 155°C
0.1
0.2
0.25
0.05
0.05
0.05
Typical
0.25
0.02
Pulse Performance Data
Pulse Performance Data
Lightning Surge
lightning surge resistors are tested in accordance with IEC 60 115-1 using both 1.2/50µs and 10/700µs pulse shapes. 10 pulses are applied. The limit of
acceptance is a shift in resistance of less than 1% from the initial value.
2512
2010
1206
0805
0603
Lightning Surge
lightning surge resistors are tested in
accordance with IEC 60 115-1 using
both 1.2/50µs and 10/700µs pulse shapes.
10 pulses are applied. The limit of
acceptance is a shift in resistance of less
than 1% from the initial value.
2512
2010
1206
0805
0603
General Note
TT Electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
The single impulse graph is the result of 50 impulses of rectangular shape applied at one minute intervals. The limit of acceptance was a shift in
resistance of less than 1% from the initial value.
2512
2010
1206
0805
0603
Continuous Load Due to Repetitive Pulses
The continuous load graph was obtained by applying repetitive rectangular pulses where the pulse period was adjusted so that the average
power dissipated in the resistor was equal to its rated power at 70°C. Again the limit of acceptance was a shift in resistance of less than 1% from the
initial value
2512
2010
1206
0805
0603
General Note
TT Electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT Electronics’ own data and is considered accurate at time of going to print.
LED 是light emitting diode (发光二极管)的缩写,是一种由半导体技术制成的电光源。LED的核心部分是由P型半导体和N型半导体组成的晶片,在P型半导体和N型半导体之间有一个过渡层,称为P2N结。在正向导通时,半导体中的多数载流子和少数载流子复合,释放出的能量以光子或部分以光子的形式发射出来,大量的光子形成光子流,即发光。P2N结加反向电压时,少数载流子难以注入,故不发...[详细]
微控制器 MCU
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