TSM2307CX
30V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
V
DS
V
GS
= -10V
R
DS(on)
(max)
Q
g
V
GS
= -4.5V
Value
-30
95
Unit
V
mΩ
140
10
nC
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM2307CX RFG
Package
SOT-23
Packing
3kpcs / 7” Reel
P-Channel MOSFET
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
STG
Limit
-30
±20
-3
-20
-1.7
1.25
0.8
+150
-50 to +150
Unit
V
V
A
A
A
W
℃
℃
Continuous Source Current (Diode Conduction)
Power Dissipation
T
a
= 25℃
T
a
= 75℃
Operating Junction Temperature
Storage Temperature Range
Document Number: DS_P0000048
1
Version: D15
TSM2307CX
30V P-Channel MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
75
130
Unit
℃/W
℃/W
Electrical Specifications
(T
C
= 25℃ unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
(Note 3,4)
(Note 3,4)
(Note 4)
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -2A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= -10V, I
D
= -6A
I
S
= -1.7V, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Min
-30
--
--
-1
--
--
--
Typ
--
76
103
--
--
--
5
Max
--
95
140
-3
-1.0
±100
--
-1.2
Unit
V
mΩ
mΩ
V
µA
nA
S
V
Q
g
V
DS
= -15V, I
D
= -3A,
V
GS
= -10V
Q
gs
Q
gd
C
iss
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
10
1.9
2
565
126
75
15
--
--
--
--
--
pF
nC
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
(Note 3,4)
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 3,4))
t
d(on)
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
=6Ω
t
r
t
d(off)
t
f
--
--
--
--
10
9
27
7
20
20
50
16
ns
(Note 3,4)
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
Note:
1.Limited by maximum junction temperature
2.Pulse width limited by safe operating area
3.Pulse test: pulse width
≤
300µs, duty cycle
≤
2%
4.Switching time is essentially independent of operating temperature.
Document Number: DS_P0000048
2
Version: D15
TSM2307CX
30V P-Channel MOSFET
Electrical Characteristics Curve
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000048
3
Version: D15
TSM2307CX
30V P-Channel MOSFET
Electrical Characteristics Curve
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000048
4
Version: D15
TSM2307CX
30V P-Channel MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
07
= Device Code
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
Document Number: DS_P0000048
5
Version: D15
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