PD - 97351A
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for improved panel efficiency
l
High repetitive peak current capability
l
Lead Free package
IRG6I320UPbF
Key Parameters
330
1.45
160
150
V
V
A
°C
V
CE
min
V
CE(ON)
typ. @ I
C
= 24A
I
RP
max @ T
C
= 25°C
T
J
max
C
G
E
E
C
G
n-channel
G
Gate
C
Collector
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
Max.
±30
24
12
160
39
16
0.31
-40 to + 150
300
Units
V
A
c
W
W/°C
°C
x
x
N
Thermal Resistance
R
θJC
Junction-to-Case
d
Parameter
Typ.
–––
Max.
3.2
Units
°C/W
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1
03/25/09
IRG6I320UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
V
(BR)ECS
∆ΒV
CES
/∆T
J
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Conditions
V
GE
= 0V, I
CE
= 500µA
e
330
30
–––
–––
–––
–––
–––
0.30
1.20
1.45
1.95
2.20
2.26
–––
-10
1.0
5.0
20
75
–––
–––
28
46
7.7
24
20
89
70
23
52
130
140
–––
240
280
–––
–––
–––
–––
1.65
–––
–––
–––
5.0
10
–––
100
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V V
GE
= 0V, I
CE
= 1 A
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 12A
V
GE
= 15V, I
CE
V
V
GE
= 15V, I
CE
V
GE
= 15V, I
CE
V
CE(on)
Static Collector-to-Emitter Voltage
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
Human Body Model
V
GE
= 15V, I
CE
= 48A, T
J
= 150°C
V
V
CE
= V
GE
, I
CE
= 250µA
V
CE
= 330V, V
GE
= 0V
µA
e
= 24A
e
= 48A
e
= 60A
e
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
e
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– mV/°C
V
CE
= 330V, V
GE
= 0V, T
J
= 100°C
V
CE
= 330V, V
GE
= 0V, T
J
= 125°C
V
CE
= 330V, V
GE
= 0V, T
J
= 150°C
nA
S
nC
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 12A
V
CE
= 200V, I
C
= 12A, V
GE
= 15V
I
C
= 12A, V
CC
= 196V
ns
R
G
= 10Ω, L=210µH, L
S
= 150nH
T
J
= 25°C
I
C
= 12A, V
CC
= 196V
ns
R
G
= 10Ω, L=200µH, L
S
= 150nH
T
J
= 150°C
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.10µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.10µF, V
GE
= 15V
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
e
ns
µJ
ESD
Machine Model
C
ies
C
oes
C
res
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
Class 2
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE
= 0V
1160 –––
61
–––
pF V
CE
= 30V
38
4.5
7.5
–––
–––
nH
–––
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
and center of die contact
See Fig.13
Notes:
Half sine wave with duty cycle <= 0.05, ton=2µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRG6I320UPbF
200
180
160
140
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
ICE (A)
200
180
160
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
0
VGE = 8.0V
VGE = 6.0V
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
200
180
160
140
ICE (A)
Fig 2. Typical Output Characteristics @ 75°C
200
180
160
140
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
100
80
60
40
20
0
0
120
100
80
60
40
20
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
VCE (V)
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
160
ICE, Collector-to-Emitter Current (A)
Fig 4. Typical Output Characteristics @ 150°C
25
140
120
100
80
60
40
20
0
2
4
6
T J = 25°C
T J = 150°C
VCE, Voltage Collector-to-Emitter (V)
IC = 12A
20
15
T J = 25°C
T J = 150°C
10
5
0
8
10
12
14
0
5
10
15
20
VGE , Gate-to-Emitter Voltage (V)
VGE , Voltage Gate-to-Emitter (V)
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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IRG6I320UPbF
25
160
140
Repetitive Peak Current (A)
20
PW= 2µs
Duty cycle <= 0.05
Half Sine Wave
IC, Collector Current (A)
120
100
80
60
40
20
15
10
5
0
25
50
75
100
125
150
T C, Case Temperature (°C)
0
25
50
75
100
125
150
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
3000
V CC = 240V
2500
Energy per Pulse (µJ)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
3000
L = 220nH
C = variable
2000
1500
25°C
1000
500
0
100
120
140
160
180
200
220
Energy per Pulse (µJ)
100°C
2500
L = 220nH
C = 0.4µF
2000
100°C
1500
25°C
1000
500
180
190
200
210
220
230
240
IC, Peak Collector Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig 9. Typical E
PULSE
vs. Collector Current
4000
3500
Energy per Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
V CC = 240V
L = 220nH
t = 1µs half sine
C= 0.4µF
3000
2500
2000
1500
1000
500
0
25
100
10µsec
100µsec
IC (A)
10
1msec
C= 0.2µF
C= 0.1µF
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
50
75
100
125
150
1
10
VCE (V)
100
1000
TJ, Temperature (ºC)
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG6I320UPbF
10000
Coes = Cce + Cgc
VGE , Gate-to-Emitter Voltage (V)
VGS = 0V,
f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
16
14
12
10
8
6
4
2
0
IC = 12A
V CES = 240V
V CES = 150V
V CES = 60V
Capacitance (pF)
1000
Cies
100
Coes
Cres
10
0
50
100
150
200
0
10
20
30
40
50
VCE, Collector-toEmitter-Voltage(V)
Q G , Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
Thermal Response ( Z thJC ) °C/W
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.1937
0.5877
1.0534
1.3665
0.000114
0.001905
0.096764
2.1458
τi
(sec)
τ
1
τ
2
τ
3
τ
4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
10
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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