Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
(Ω)
0.022 at V
GS
= 10 V
0.030 at V
GS
= 4.5 V
I
D
(A)
7.5
6.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT
®
Plus
• Compliant to RoHS directive 2002/95/EC
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(V)
Diode Forward Voltage
0.50 V at 1.0 A
I
F
(A)
2.0
D
1
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
Schottky Diode
G
2
Ordering Information:
Si4808DY-T1-E3
(Lead (Pb)-free)
Si4808DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.7
2.0
1.3
- 55 to 150
7.5
6.0
30
0.9
1.1
0.7
W
°C
10 s
30
± 20
5.7
4.6
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady-State
Steady-State
Symbol
R
thJA
R
thJC
Typ.
52
93
35
Max.
62.5
110
40
Schottky
Typ.
53
93
35
Max.
62.5
110
40
°C/W
Unit
Document Number: 71157
S09-0867-Rev. C, 18-May-09
www.vishay.com
1
Si4808DY
Vishay Siliconix
MOSFET SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
Ch-1
Ch-2
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
0.5
8
10
21
10
40
32
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7.5 A
13
2
2.7
3.2
16
20
40
20
80
70
ns
Ω
20
nC
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
0.018
0.024
22
0.8
0.47
1.2
0.5
0.022
0.030
0.8
± 100
1
100
15
2000
A
Ω
S
V
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1.0 A
I
F
= 1.0 A, T
J
= 125 °C
V
R
= 30 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 30 V, T
J
= 100 °C
V
R
= - 30 V, T
J
= 125 °C
V
R
= 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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