DISCRETE SEMICONDUCTORS
DATA SHEET
PEMB3; PUMB3
PNP/PNP resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2001 Sep 19
2003 Oct 15
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral drivers
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
DESCRIPTION
PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMB3
PUMB3
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
SOT666
SOT363
EIAJ
−
SC-88
Z3
B5*
(1)
MARKING CODE
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PEMB3; PUMB3
PARAMETER
collector-emitter
voltage
output current (DC)
PNP
PNP
bias resistor
bias resistor
TYP.
−
−
−
−
4.7
open
MAX.
−50
−100
−
−
−
−
UNIT
V
mA
−
−
kΩ
−
NPN/PNP
COMPLEMENT
PEMD6
PUMD6
NPN/NPN
COMPLEMENT
PEMH7
PUMH7
PINNING
TYPE NUMBER
PEMB3
PUMB3
handbook, halfpage
6
SIMPLIFIED OUTLINE AND SYMBOL
PIN
5
4
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R1
TR1
R1
TR2
4
5
6
1
Top view
2
3
MAM452
1
2
3
2003 Oct 15
2
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMB3
PUMB3
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMB3; PUMB3
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
mW
mW
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
200
200
+150
150
+150
mW
mW
°C
°C
°C
open emitter
open base
open collector
−
−
−
−
−
−50
−50
−5
−100
−100
V
V
V
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2003 Oct 15
3
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Notes
T
amb
≤
25
°C
note 1
note 1
T
amb
≤
25
°C
note 1
notes 1 and 2
PARAMETER
CONDITIONS
PEMB3; PUMB3
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input resistor
collector capacitance
I
E
= i
e
= 0; V
CB
=
−10
V;
f = 1 MHz
CONDITIONS
V
CB
=
−50
V; I
E
= 0
V
CE
=
−30
V; I
B
= 0
V
CE
=
−30
V; I
B
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
I
C
=
−5
mA; I
B
=
−0.25
mA
MIN.
−
−
−
−
200
−
3.3
−
TYP.
−
−
−
−
−
−
4.7
−
MAX.
−100
−1
−50
−100
−
−100
6.1
3
mV
kΩ
pF
UNIT
nA
μA
μA
nA
2003 Oct 15
4
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
PACKAGE OUTLINES
PEMB3; PUMB3
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2003 Oct 15
5
测试/测量
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