• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
MICRO FOOT
®
1.6 x 1.6
457x
8 x
x
mm
1
1.6
Backside View
D
3
APPLICATIONS
• Power management
1
G
S
Marking Code:
8457
Ordering Information:
Si8457DB-T1-E1 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
Maximum Power Dissipation
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
c
V
PR
IR / convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
-12
±8
-10.2
a
-8.2
a
-6.5
b
-5.2
b
-25
-2.3
a
-0.92
b
2.7
a
1.8
a
1.1
b
0.73
b
-55 to 150
260
260
°C
W
A
UNIT
V
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
S15-1692-Rev. B, 20-Jul-15
6
1.
m
m
4
S
Bump
Side
View
G
Document Number: 64267
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8457DB
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJA
TYPICAL
35
85
MAXIMUM
45
110
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a,b
Maximum Junction-to-Ambient
c,d
t=5s
t=5s
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -12 V, V
GS
= 0 V
V
DS
= -12 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -3 A
V
GS
= -2.5 V, I
D
= -3 A
V
GS
= -1.8 V, I
D
= -1 A
V
DS
= -6 V, I
D
= -3 A
MIN.
-12
-
-
-0.4
-
-
-
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-5
1.8
-
-
-
-
-
0.0150
0.0190
0.0280
26
2900
715
620
62
37
4.2
10
16
27
60
300
210
7
13
400
215
-
-
-0.72
240
640
93
147
MAX.
-
-
-
-0.9
± 100
-1
-10
-
0.0190
0.0234
0.0350
-
-
-
-
93
56
-
-
-
50
120
600
420
15
25
800
430
-2.3
c
-25
-1.2
480
1280
-
-
UNIT
V
mV/°C
V
nA
μA
A
S
V
DS
= -6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -6 V, V
GS
= -8 V, I
D
= -3 A
V
DS
= -6 V, V
GS
= -4.5 V, I
D
= -3 A
V
GS
= -0.1 V, f = 1 MHz
V
DD
= -6 V, R
L
= 2
I
D
-3 A, V
GEN
= -4.5 V, R
g
= 1
pF
nC
ns
V
DD
= -6 V, R
L
= 2
I
D
-3 A, V
GEN
= -8 V, R
g
= 1
T
A
= 25 °C
I
S
= -3 A, V
GS
= 0 V
I
F
= -3 A, dI/dt = 100 A/μs, T
J
= 25 °C
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1692-Rev. B, 20-Jul-15
Document Number: 64267
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8457DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 5 V thru 2 V
20
I
D
- Drain Current (A)
Vishay Siliconix
10
8
I
D
- Drain Current (A)
15
6
T
C
= 25
°C
10
4
T
C
= 125
°C
T
C
= - 55
°C
5
V
GS
= 1.5 V
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.10
4000
3500
Transfer Characteristics
0.08
R
DS(on)
- On-Resistance (Ω)
C
iss
3000
C - Capacitance (pF)
V
GS
= 1.8 V
0.06
2500
2000
1500
1000
500
0
C
rss
C
oss
0.04
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0
0
5
10
15
20
25
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
8
Capacitance
1.4
R
DS(on)
- On-Resistance (Normalized)
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 3 A
6
V
DS
= 6 V
1.3
V
GS
= 4.5 V, 2.5 V; I
D
= 3 A
1.2
V
DS
= 3 V
4
V
DS
= 9.6 V
1.1
V
GS
= 1.8 V; I
D
= 3 A
1.0
2
0.9
0
0
10
20
30
40
50
60
70
Q
g
- Total
Gate
Charge (nC)
0.8
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-1692-Rev. B, 20-Jul-15
On-Resistance vs. Junction Temperature
Document Number: 64267
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8457DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
0.10
0.08
I
S
-
Source
Current (A)
T
J
= 150
°C
10
I
D
= 3 A
R
DS(on)
- On-Resistance (Ω)
0.06
T
J
= 25
°C
1
0.04
T
J
= 125
°C
0.02
T
J
= 25
°C
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
-
Source-to-Drain
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.9
On-Resistance vs. Gate-to-Source Voltage
80
0.8
60
0.7
0.6
I
D
= 250 μA
0.5
Power (W)
75
100
125
150
V
GS(th)
(V)
40
20
0.4
0.3
- 50
- 25
0
25
50
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
ID Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
IDM Limited
1 ms
1
10 ms
100 ms
1
s
10
s
DC
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. B, 20-Jul-15
Document Number: 64267
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8457DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
1.5
Vishay Siliconix
8
I
D
- Drain Current (A)
1.2
4
Power (W)
0
25
50
75
100
125
150
6
0.9
0.6
2
0.3
0
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating
a
Power Derating
Notes
• When mounted on 1" x 1" FR4 with full copper.
a. The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1692-Rev. B, 20-Jul-15
Document Number: 64267
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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