HCF4012B
DUAL 4 INPUT NAND GATE
s
s
s
s
s
s
s
s
PROPAGATION DELAY TIME
t
PD
= 60ns (Typ.) at V
DD
= 10V
BUFFERED INPUTS AND OUTPUTS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED UP TO
20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF4012BEY
HCF4012BM1
DESCRIPTION
The HCF4012B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
technology available in DIP and SOP packages.
The HCF4012B DUAL 4-INPUT NAND GATE
provides the system designer with direct
PIN CONNECTION
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implementation of the NAND function and
supplement the existing family of CMOS gates. All
inputs and outputs are buffered.
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HCF4012M013TR
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T&R
September 2001
1/7
HCF4012B
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
6, 8
2, 3, 4, 5
9, 10, 11, 12
1, 13
7
14
SYMBOL
NC
A, B, C, D
E, F, G, H
J, K
V
SS
V
DD
NAME AND FUNCTION
Not Connected
Data Inputs
Data Inputs
Data Outputs
Negative Supply Voltage
Positive Supply Voltage
TRUTH TABLE
INPUTS
A, B, C, D
E, F, G, H
L
H
L
H
OUTPUTS
J, K
H
H
H
L
LOGIC DIAGRAM
L
L
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Parameter
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
bs
O
V
I
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
T
op
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
Unit
V
V
°C
et
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Value
s)
t(
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Unit
V
V
mA
mW
mW
°C
°C
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-65 to +150
2/7
HCF4012B
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
I
(V)
0/5
0/10
0/15
0/20
0/5
0/10
0/15
5/0
10/0
15/0
0.5/4.5
1/9
1.5/13.5
4.5/0.5
9/1
13.5/1.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
V
O
(V)
|I
O
| V
DD
(µA) (V)
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
10
15
18
T
A
= 25°C
Min.
Typ.
0.01
0.01
0.01
0.02
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.36
-0.44
-1.1
-3.0
0.44
1.1
3.0
-3.2
-1
-2.6
-6.8
1
2.6
6.8
3.5
7
11
Max.
0.25
0.5
1
5
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
Value
-40 to 85°C
Min.
Max.
7.5
15
30
150
4.95
9.95
14.95
0.05
0.05
0.05
-55 to 125°C
Min.
Max.
7.5
15
30
150
Unit
I
L
Quiescent Current
µA
V
OH
High Level Output
Voltage
Low Level Output
Voltage
High Level Input
Voltage
Low Level Input
Voltage
Output Drive
Current
V
OL
V
IH
V
IL
I
OH
I
OL
Output Sink
Current
Input Leakage
Current
Input Capacitance
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/18
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
V
I
I
C
I
Any Input
Any Input
The Noise Margin for both "1" and "0" level is: 1V min. with V
DD
=5V, 2V min. with V
DD
=10V, 2.5V min. with V
DD
=15V
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200KΩ, t
r
= t
f
= 20 ns)
Symbol
Parameter
O
so
b
t
PLH
t
PHL
Propagation Delay Time
te
le
ro
P
uc
d
s)
t(
5
10
15
5
10
15
so
b
-O
5
Test Condition
P
te
le
-1.15
-0.36
-0.9
-2.4
0.36
0.9
2.4
±0.1
7.5
od
r
1.5
3
4
s)
t(
uc
1.5
3
4
V
V
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±1
mA
mA
µA
pF
±10
-5
±1
Value (*)
Min.
Typ.
125
60
45
100
50
40
Max.
250
120
90
200
100
80
Unit
V
DD
(V)
ns
t
TLH
t
THL
Output Transition Time
ns
(*) Typical temperature coefficient for all V
DD
value is 0.3 %/°C.
3/7
HCF4012B
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= 200KΩ
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES
(f=1MHz; 50% duty cycle)
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