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MMBD2838LT1

产品描述Diodes - General Purpose, Power, Switching 75V 150mA
产品类别分立半导体    二极管   
文件大小121KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MMBD2838LT1概述

Diodes - General Purpose, Power, Switching 75V 150mA

MMBD2838LT1规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
厂商名称ON Semiconductor(安森美)
零件包装代码SOT-23
包装说明CASE 318-08, 3 PIN
针数3
制造商包装代码318-08
Reach Compliance Codenot_compliant
ECCN代码EAR99
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JEDEC-95代码TO-236AB
JESD-30 代码R-PDSO-G3
JESD-609代码e0
湿度敏感等级1
元件数量2
端子数量3
最高工作温度150 °C
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
最大功率耗散0.225 W
认证状态Not Qualified
最大重复峰值反向电压50 V
最大反向恢复时间0.004 µs
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间30

文档预览

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MMBD2837LT1G,
MMBD2838LT1G,
SMMBD2837LT1G
Monolithic Dual Switching
Diodes
http://onsemi.com
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO−236AB)
CASE 318
STYLE 9
ANODE
1
2
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Peak Reverse Voltage
D.C. Reverse Voltage
MMBD2837LT1G, SMMBD2837LT1G
MMBD2838LT1G
Peak Forward Current
Average Rectified Current
Symbol
V
RM
V
R
Value
75
30
50
450
300
150
100
Unit
Vdc
Vdc
3
CATHODE
MARKING DIAGRAM
I
FM
I
O
mAdc
mAdc
xxx
A5
1
xxx M
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Specific Device Code
= MMBD2837LT1G,
SMMBD2837LT1G
MA6 = MMBD2838LT1G
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Value
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
Unit
mW
mW/C
C/W
mW
mW/C
C/W
C
ORDERING INFORMATION
Device
MMBD2837LT1G
SMMBD2837LT1G
MMBD2838LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
1. FR−5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 7
1
Publication Order Number:
MMBD2837LT1/D

 
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