AUTOMOTIVE GRADE
AUIRF540Z
AUIRF540ZS
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
100V
21m
26.5m
36A
D
S
D
G
TO-220AB
AUIRF540Z
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
S
G
D
2
Pak
AUIRF540ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRF540Z
AUIRF540ZS
Package Type
TO-220
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF540Z
AUIRF540ZS
AUIRF540ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
36
25
140
92
0.61
± 20
83
120
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
1.64
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-09-22
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF540Z/S
Min. Typ. Max. Units
Conditions
100 ––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.093 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
21
26.5 m V
GS
= 10V, I
D
= 22A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
36
––– –––
S V
DS
= 25V, I
D
= 22A
––– –––
20
V
DS
=100V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 100V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
42
9.7
15
15
51
43
39
4.5
7.5
1770
180
100
730
110
170
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 22A
nC
V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 22A
ns
R
G
= 12
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 22A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 22A, V
DD
= 50V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
Output Capacitance
C
oss
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
33
41
36
140
1.3
50
62
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.46mH, R
G
= 25, I
AS
= 20A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, T
J
= 25°C, L = 0.46mH, R
G
= 25, I
AS
= 20A, V
GS
=10V.
This is only applied to TO-220AB package.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
2
2017-09-22
AUIRF540Z/S
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
4.5V
4.5V
1
0.1
1
60µs PULSE WIDTH
Tj = 25°C
10
100
60µs PULSE WIDTH
Tj = 175°C
1
0.1
0
1
10
100
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
80
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
)
T J = 175°C
60
100
T J = 175°C
40
T J = 25°C
20
VDS = 10V
380µs PULSE WIDTH
0
0
10
20
30
40
50
10
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
1
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
2017-09-22
3
AUIRF540Z/S
3000
2500
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 22A
VDS = 80V
VDS= 50V
VDS= 20V
16
C, Capacitance (pF)
2000
Ciss
12
1500
8
1000
500
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
0
10
20
30
VDS, Drain-to-Source Voltage (V)
40
50
60
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
100
10
100µsec
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
100
1000
0.1
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2017-09-22
AUIRF540Z/S
40
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 22A
VGS = 10V
ID , Drain Current (A)
30
2.0
20
1.5
10
1.0
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-09-22
NXP MCU
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