GaAs INTEGRATED CIRCUIT
µ
PG2251T6M
The
µ
PG2251T6M is a fully matched, +25 dBm GaAs MMIC power amplifier for Bluetooth Class 1.
This device realizes high efficiency, high gain and high output power.
suitable for high-density surface mounting.
This device is housed in a 12-pin plastic TSQFN (Thin Small Quad Flat Non-leaded) (T6M) package, and is
FEATURES
• Operating frequency
• Supply voltage
• Control voltage
• Circuit current
• Output power
• Gain control range
• High efficiency
: f
opt
= 2 400 to 2 500 MHz (2 450 MHz TYP.)
: V
DD
1, 2, 3 = 2.5 to 3.5 V (3.0 V TYP.)
: V
cont
= 1.5 to 2.1 V (1.8 V TYP.)
• High-density surface mounting : 12-pin plastic TSQFN (T6M) package (2.0
×
2.0
×
0.37 mm)
APPLICATIONS
• Power Amplifier for Bluetooth Class 1, ZigBee
ORDERING INFORMATION
Part Number
Order Number
µ
PG2251T6M-E2
CO
µ
PG2251T6M-E2-A
Remark:
To order evaluation samples, please contact your nearby sales office.
Part number for sample order:
µ
PG2251T6M-A
DI
S
Caution:
Observe precautions when handling, because these devices are sensitive to electrostatic discharge.
Document No. PG10783EJ01V0DS (1st edition)
Date Published October 2009 NS
NT
IN
TM
: I
DD
= 230 mA TYP. @ V
DD
1, 2, 3 = 3.0 V, V
cont
= 1.8 V, P
out
= +25 dBm
: GCR = 70 dB TYP. @ V
DD
1, 2, 3 = 3.0 V, V
cont
= 0 to 1.8 V, P
in
=
−5
dBm
: PAE = 47% TYP. @ V
DD
1, 2, 3 = 3.0 V, V
cont
= 1.8 V, P
in
=
−5
dBm
: P
out
= +25.0 dBm TYP. @ V
DD
1, 2, 3 = 3.0 V, V
cont
= 1.8 V, P
in
=
−5
dBm
etc.
Package
Marking
2251
12-pin plastic TSQFN
(T6M) (Pb-Free)
UE
Supplying Form
•
Embossed tape 8 mm wide
•
Qty 3 kpcs/reel
DESCRIPTION
•
Pin 10, 11, 12 face the perforation side of the tape
D
+25 dBm MATCHED POWER AMPLIFIER FOR Bluetooth
TM
Class 1
µ
PG2251T6M
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No.
1
Pin Name
V
cont
GND
GND
P
in
(Top View)
12
11
10
(Top View)
12
11
10
M/N
(Bottom View)
10
11
12
Bias Circuit
1
2
3
9
8
7
1
2
3
9
8
7
M/N
9
8
7
4
5
6
4
5
6
6
NT
IN
Symbol
Ratings
6.0
Unit
V
V
DD
1, 2, 3
V
cont
I
DD
3.0
V
300
0.5
mA
I
cont
P
in
P
D
T
A
mA
+10
dBm
mW
°C
°C
600
Note
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Supply Voltage
Control Voltage
Circuit Current
Control Current
Input Power
Power Dissipation
CO
T
stg
Parameter
Symbol
f
opt
V
DD
1, 2, 3
V
cont
MIN.
2 400
2.5
1.5
Operating Ambient Temperature
Storage Temperature
−40
to +85
−55
to +150
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB, T
A
= +85°C
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
TYP.
2 450
3.0
1.8
MAX.
2 500
3.5
2.1
Unit
MHz
V
V
DI
S
Operating Frequency
Supply Voltage
Control Voltage
2
Data Sheet PG10783EJ01V0DS
UE
1
2
3
6
7
8
9
V
DD
2
GND
GND
GND
P
out
5
4
Remark
Exposed pad : GND
D
2
3
4
5
V
DD
1
10
11
12
V
DD
3
V
DD
3
2251
µ
PG2251T6M
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, V
DD
1, 2, 3 = 3.0 V, V
cont
= 1.8 V, f = 2.4 to 2.5 GHz,
unless otherwise specified)
Parameter
Circuit Current
Output Power 1
Output Power 2
Gain Control Range
Efficiency
2nd Harmonics
3rd Harmonics
Input Return Loss
Output Return Loss
Symbol
I
DD
P
out
1
P
out
2
GCR
PAE
2f0
3f0
RL
in
RL
out
Test Conditions
P
in
=
−5
dBm
P
in
=
−5
dBm
V
cont
= 0 V, P
in
=
−5
dBm
V
cont
= 0 to 1.8 V, P
in
=
−5
dBm
P
in
=
−5
dBm
P
in
=
−5
dBm
P
in
=
−5
dBm
P
in
=
−30
dBm
P
in
=
−30
dBm
MIN.
−
+23
−
−
−
−
−
−
−
TYP.
230
MAX.
265
−
Unit
mA
V
cont
390 pF
2
Bias Circuit
CO
3
DI
S
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NT
IN
V
DD
3
P
out
0.1
µ
F
6.8 nH
12
11
10
M/N
1
9
8
7
M/N
4
5
6
2.2 nH
0.1
µ
F
0.1
µ
F
P
in
V
DD
1
V
DD
2
Data Sheet PG10783EJ01V0DS
EVALUATION CIRCUIT
UE
47
−
%
−35
−30
−5
−
−
−
−
dBc
dBc
dB
dB
−10
D
+25
−45
70
dBm
−30
−
dBm
dB
3
µ
PG2251T6M
TYPICAL CHARACTERISTICS (T
A
= +25°C, V
DD
1, 2, 3 = 3.0 V, V
cont
= 1.8 V, f = 2.45 GHz, unless
otherwise specified)
2nd Harmonics 2f0 (dBc), 3rd Harmonics 3f0 (dBc)
OUTPUT POWER, GAIN, CIRCUIT
CURRENT, PAE vs. INPUT POWER
Circuit Current I
DD
(mA), Efficiency PAE (%)
2ND HARMONICS, 3RD HARMONICS
vs. INPUT POWER
–20
–25
–30
–35
–40
–45
–50
2f0
45
Output Power P
out
(dBm), Gain (dB)
320
40
35
30
25
20
15
10
5
0
–30
–25
–20
I
DD
Gain
280
240
200
160
P
out
120
80
PAE
40
0
–15
–10
–5
–40
0
–55
–30
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
DI
S
4
CO
Data Sheet PG10783EJ01V0DS
NT
IN
UE
3f0
–25
–20
–15
–10
–5
0
5
Input Power P
in
(dBm)
D
µ
PG2251T6M
S-PARAMETERS
Condition : T
A
= +25°C, V
DD
1, 2, 3 =3.0 V, V
cont
= 1.8 V, P
in
=
−
30 dBm
S
11
-FREQUENCY
1: –4.3 dB
2: –4.4 dB
3: –4.8 dB
4: –1.2 dB
S
12
-FREQUENCY
0 dB
0 dB
2
13
4
START 0.1 GHz
STOP 8.1 GHz
S
21
-FREQUENCY
2
1 3
NT
IN
1:
35.9 dB
2: 35.5 dB
3: 34.8 dB
4: –22.2 dB
0 dB
0 dB
4
CO
START 0.1 GHz
STOP 8.1 GHz
Remarks 1.
The graphs indicate nominal characteristics.
2.
Maker 1 : 2.4 GHz, 2 : 2.45 GHz, 3 : 2.5 GHz, 4 : 4.9 GHz
DI
S
UE
2
4
1 3
START 0.1 GHz
STOP 8.1 GHz
S
22
-FREQUENCY
1: –15.2 dB
2: –17.0 dB
3: –15.0 dB
4: –2.0 dB
2
1 3
START 0.1 GHz
Data Sheet PG10783EJ01V0DS
D
1: –56.8 dB
2: –53.6 dB
3: –51.9 dB
4: –42.5 dB
4
STOP 8.1 GHz
5
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