SUU09N10-76P-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
9
d
9
d
20
18
16.2
32.1
b
2.5
- 55 to 150
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited
Symbol
R
thJA
R
thJC
Limit
50
3.9
Unit
°C/W
Document Number: 63456
S11-2184-Rev. A, 07-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUU09N10-76P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
c
c
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.1 A
V
GS
= 6 V, I
D
= 5.4 A
V
DS
= - 20 V, I
D
= 6.1 A
Min.
100
2.5
Typ.
Max.
Unit
4
± 250
1
50
250
V
nA
µA
A
15
0.063
0.080
13
0.076
0.096
S
505
V
GS
= 0 V, V
DS
= 50 V, f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 6.1 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 6.1 A
f = 1 MHz
V
DD
= 50 V, R
L
= 10.2
I
D
4.9 A, V
GEN
= 10 V, R
g
= 1
0.2
71
35
12.7
8.5
3.6
4
0.9
7
11
11
6
1.8
14
20
20
12
ns
19.1
12.8
nC
pF
Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 4.9 A, dI/dt = 100 A/µs
I
F
= 4.9 A, V
GS
= 0 V
0.82
36
2.7
46
9
20
1.5
53
4.1
69
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63456
S11-2184-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUU09N10-76P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
0.126
V
GS
= 10 V thru 6 V
R
DS(on)
- On-Resistance (Ω)
15
I
D
- Drain Current (A)
0.102
V
GS
= 6 V
0.078
V
GS
= 10 V
0.054
10
5
V
GS
= 5 V
0
0
2
3
V
DS
- Drain-to-Source Voltage (V)
1
4
0.030
0
3
6
9
12
15
I
D
- Drain Current (A)
Output Characteristics
1.5
0.20
On-Resistance vs. Drain Current
I
D
= 6.1A
1.2
R
DS(on)
- On-Resistance (Ω)
0.15
T
J
= 125
°C
0.10
T
J
= 25
°C
0.05
I
D
- Drain Current (A)
0.9
T
C
= 25
°C
0.6
0.3
T
C
= 125
°C
T
C
= - 55
°C
0
0
1.5
3
4.5
6
V
GS
- Gate-to-Source Voltage (V)
0
4
6
7
9
10
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
20
10
On-Resistance vs. Gate-to-Source Voltage
T
C
= - 55
°C
g
fs
- Transconductance (S)
15
I
D
= 6.1 A
T
C
= 25
°C
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 25 V
6
V
DS
= 50 V
10
T
C
= 125
°C
4
V
DS
= 80 V
5
2
0
0
2
4
6
I
D
- Drain Current (A)
8
10
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
Document Number: 63456
S11-2184-Rev. A, 07-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUU09N10-76P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
3.9
I
D
= 250 μA
3.5
I
S
- Source Current (A)
T
J
= 150
°C
10
V
GS(th)
(V)
3.1
2.7
1
T
J
= 25
°C
2.3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
1.9
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
800
122
I
D
= 250 μA
V
DS
- Drain-to-Source Voltage (V)
117
C - Capacitance (pF)
600
C
iss
112
400
107
200
C
oss
C
rss
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
102
97
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Capacitance
2.1
I
D
= 6.1 A
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
1.7
Drain Source Breakdown vs. Junction Temperature
16
12
V
GS
= 6 V
1.3
I
D
- Drain Current (A)
150
8
0.9
4
0.5
- 50
0
- 25
0
25
50
75
100
125
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
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Document Number: 63456
S11-2184-Rev. A, 07-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUU09N10-76P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
10 ms
DC, 10 s
1 s, 100 ms
0.1
T
C
= 25
°C
Single Pulse
I
DAV
(A)
T
J
= 150
°C
T
J
= 25
°C
1
BVDSS Limited
1
0.000001
0.01
0.00001
0.0001
Time (s)
0.001
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?63456.
Document Number: 63456
S11-2184-Rev. A, 07-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
第一次用STM32，在SPI上遇到个问题~
SPI写字节函数里面
unsigned char XPT2046_SendByte(unsigned char byte)
{
/* Loop while DR register in not emplty */
while (SPI_I2S_GetF ......
ARM技术
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