VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
2
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
2
3
1
Cathode
3
Anode
• Designed and qualified
JEDEC
®
-JESD 47
according
to
TO-220AC
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-220AC
20 A
800 V, 1000 V, 1200 V
1.31 V
320 A
95 ns
150 °C
Single die
0.6
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
20 A, T
J
= 25 °C
Range
Sinusoidal waveform
CHARACTERISTICS
VALUES
800 to 1200
20
320
95
1.31
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF08PbF, VS-20ETF08-M3
VS-20ETF10PbF, VS-20ETF10-M3
VS-20ETF12PbF, VS-20ETF12-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
6
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 113 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
270
320
365
515
5150
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94098
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.31
11.88
0.93
0.1
6
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 A
pk
25 A/μs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.9
62
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
20ETF08
20ETF10
20ETF12
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 11-Feb-16
Document Number: 94098
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
Vishay Semiconductors
35
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
140
30
25
20
180°
120°
90°
60°
30°
RMS limit
130
Ø
Conduction angle
120
30°
110
60°
90°
120°
180°
100
0
5
10
15
20
25
15
10
5
0
0
5
10
15
20
25
Ø
Conduction period
20ETF.. Series
T
J
= 150 °C
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
280
260
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
140
Ø
240
220
200
180
160
140
120
100
80
60
130
Conduction period
120
60°
110
30°
90°
120°
180°
100
0
5
10
15
20
25
30
35
VS-20ETF..
Series
DC
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
350
180°
120°
90°
60°
30°
RMS limit
300
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
250
200
150
100
50
Ø
Conduction angle
20ETF.. Series
T
J
= 150 °C
5
10
15
20
25
VS-20ETF..
Series
0
0.01
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94098
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
1000
6
5
4
3
I
FM
= 10 A
2
1
20ETF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
Vishay Semiconductors
Instantaneous Forward Current (A)
Q
rr
- Typical Reverse
Recovery Charge (µC)
I
FM
= 20 A
100
10
T
J
= 25 °C
T
J
= 150 °C
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.7
0.6
20ETF.. Series
T
J
= 25 °C
10
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
0.5
0.4
0.3
0.2
0.1
0
0
50
100
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
8
6
I
FM
= 10 A
4
I
FM
= 5 A
2
I
FM
= 1 A
0
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
1.2
20ETF.. Series
T
J
= 150 °C
0.9
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
25
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
I
rr
- Typical Reverse
Recovery Current (A)
200
t
rr
- Typical Reverse
Recovery Time (µs)
20
15
0.6
0.3
0
0
50
100
150
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 11-Feb-16
Document Number: 94098
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
35
30
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
25
20
15
10
I
FM
= 1 A
5
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state
value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94098
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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