MIXA100W1200TEH
Six-Pack
XPT IGBT
V
CES
= 1200 V
I
C25
= 155 A
V
CE(sat)
= 1.8 V
Part name
(Marking on product)
MIXA100W1200TEH
30, 31, 32
D1
D3
D5
16, 17, 18
1
19
2
NTC
T1
5
6
27
28
29
D2
T3
9
10
24
25
26
D4
T5
21
22
23
D6
E72873
Pin configuration see outlines.
20
3
4
33, 34, 35
T2
7
8
T4
11
12
T6
13, 14, 15
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x I
C
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low V
CE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
• Optimizes pin layout
IXYS reserves the right to change limits, test conditions and dimensions.
20110505a
© 2011 IXYS All rights reserved
1-6
MIXA100W1200TEH
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
SCSOA
t
SC
I
SC
R
thJC
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
Conditions
T
VJ
= 25°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 100 A; V
GE
= 15 V
I
C
= 4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
= 100 A
inductive load
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 7
W
V
GE
= ±15 V; R
G
= 7
W;
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
min.
typ.
max.
1200
±20
±30
155
108
500
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
1.8
2.1
5.4
6.0
0.03
0.6
295
70
40
250
100
8.5
11
2.1
6.5
0.3
500
T
VJ
= 125°C
V
CEK
= 1200 V
T
VJ
= 125°C
300
10
400
0.25
A
µs
A
K/W
V
CE
= 900 V; V
GE
= ±15 V;
R
G
= 7
W;
non-repetitive
(per IGBT)
Output Inverter D1 - D6
Ratings
Symbol
V
RRM
I
F25
I
F80
V
F
Q
rr
I
RM
t
rr
E
rec
R
thJC
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80°C
I
F
= 100 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -1600 A/µs
I
F
= 100 A; V
GE
= 0 V
(per diode)
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
min.
typ.
max.
1200
135
90
Unit
V
A
A
V
V
µC
A
ns
mJ
1.95
1.95
12.5
100
350
4
2.2
0.4
T
C
= 25°C unless otherwise stated
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
20110505a
© 2011 IXYS All rights reserved
2-6
MIXA100W1200TEH
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definitions
resistance
Conditions
T
C
= 25°C
min.
4.75
Ratings
typ. max.
5.0
5.25
3375
Unit
kW
K
100000
10000
R
[Ω]
1000
100
10
0
25
50
75
100
125
150
T
C
[°C]
Typ. NTC resistance vs. temperature
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
CTI
M
d
d
S
d
A
R
pin-chip
R
thCH
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Conditions
min.
-40
-40
Ratings
typ. max.
125
150
125
3000
200
Unit
°C
°C
°C
V~
Nm
mm
mm
I
ISOL
< 1 mA; 50/60 Hz
3
10
7.5
2.5
with heatsink compound
0.02
300
6
mW
K/W
g
Equivalent Circuits for Simulation
I
V
0
R
0
Symbol
V
0
R
0
V
0
R
0
Definitions
IGBT
free wheeling diode
Conditions
T1 - T6
D1 - D6
min.
T
VJ
= 150°C
T
VJ
= 150°C
Ratings
typ. max.
1.1
13.8
1.25
8.5
Unit
V
mW
V
mW
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20110505a
© 2011 IXYS All rights reserved
3-6
MIXA100W1200TEH
Circuit Diagram
30, 31, 32
16, 17, 18
2D Data Matrix
FOSS-ID 6 digits
XXX XX-XXXXX
YYCWx
1
19
2
NTC
27
28
29
5
6
24
25
26
9
Logo
10
21
22
23
Part name
Date Code
Prod.Index
Part number
M
I
X
A
100
W
1200
T
EH
= Module
= IGBT
= XPT
= standard
= Current Rating [A]
= Six-Pack
= Reverse Voltage [V]
= NTC
= E3-Pack
20
3
4
33, 34, 35
7
8
11
12
13, 14, 15
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
MIXA100W1200 TEH
Marking on Product
MIXA100W1200TEH
Delivering Mode Base Qty Ordering Code
Box
5
tbd
IXYS reserves the right to change limits, test conditions and dimensions.
20110505a
© 2011 IXYS All rights reserved
4-6
MIXA100W1200TEH
Transistor T1 - T6
200
V
GE
= 15 V
200
V
GE
= 15 V
17 V
19 V
13 V
11 V
150
150
I
C
[A]
100
T
VJ
= 25°C
T
VJ
= 125°C
I
C
[A]
T
VJ
= 125°C
100
9V
50
50
0
0
1
2
3
0
0
1
2
3
4
V
CE
[V]
Fig. 1 Typ. output characteristics
200
180
160
140
15
20
V
CE
[V]
Fig. 2 Typ. output characteristics
I
C
= 100 A
V
CE
= 600 V
I
C
120
100
V
GE
[V]
10
[A]
80
60
40
20
0
5
6
7
8
T
VJ
= 125°C
T
VJ
= 25°C
9
10
11
12
13
5
0
0
100
200
300
400
V
GE
[V]
Fig. 3 Typ. tranfer characteristics
20
18
16
14
R
G
= 6.8
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
16
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
I
C
= 100 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
14
E
12
10
E
[mJ]
E
off
E
on
12
E
off
[mJ]
8
6
4
2
0
0
40
80
120
160
200
10
8
E
on
6
0
4
8
12
16
20
24
I
C
[A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
R
G
[Ω]
Fig. 6 Typ. switching energy vs. gate resistance
20110505a
© 2011 IXYS All rights reserved
5-6
嵌入式系统
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